{"title":"热氧化过程中多晶硅表面凹凸度的演变","authors":"G.V. Perov, E. G. Salman, A. Ignatov","doi":"10.1109/APEIE.2000.913080","DOIUrl":null,"url":null,"abstract":"A simple phenomenological model of changing asperity surface, in the process of thermal oxidation of polycrystalline silicon, is examined. This allows to prognosticate and consequently deliberately change electrical characteristics of the dielectric layer.","PeriodicalId":184476,"journal":{"name":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Evolution of relief of asperited polycrystalline silicon surface in the process of thermal oxidation\",\"authors\":\"G.V. Perov, E. G. Salman, A. Ignatov\",\"doi\":\"10.1109/APEIE.2000.913080\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A simple phenomenological model of changing asperity surface, in the process of thermal oxidation of polycrystalline silicon, is examined. This allows to prognosticate and consequently deliberately change electrical characteristics of the dielectric layer.\",\"PeriodicalId\":184476,\"journal\":{\"name\":\"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEIE.2000.913080\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEIE.2000.913080","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Evolution of relief of asperited polycrystalline silicon surface in the process of thermal oxidation
A simple phenomenological model of changing asperity surface, in the process of thermal oxidation of polycrystalline silicon, is examined. This allows to prognosticate and consequently deliberately change electrical characteristics of the dielectric layer.
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