利用数值模拟分析了空间应用GaN HEMT参数对阻挡层厚度的依赖关系

2017 IEEE 2nd International Conference on Opto-Electronic Information Processing (ICOIP) Pub Date : 2017-07-01 DOI:10.1109/OPTIP.2017.8030703

Gudkov Aleksandr, V. Shashurin, V. Vyuginov, V. Tikhomirov, S. Vidyakin, S. Agasieva, S. Chizhikov

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引用次数: 5

摘要

对基于GaN/AlN/AlGaN异质结构的场效应微波高电子迁移率晶体管(HEMTs)进行了数值模拟。研究结果表明，最佳厚度的AlGaN阻挡层，可以实现高微波功率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Dependence analysis of the GaN HEMT parameters for space application on the thickness AlGaN barrier layer by numerical simulation

Numerical simulation of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses of the AlGaN barrier layer, allowing high microwave power implementation.

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2017 IEEE 2nd International Conference on Opto-Electronic Information Processing (ICOIP)

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