W. Ho, Min-Chun Huang, Yi-Yu Lee, Zhong-Fu Hou, Jian-Jyun Liao
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Demonstration of high efficiency 19.68% MOS-structure silicon solar cell based on 20-nm TiO2 space layer at 4V biasing
The photovoltaic performance enhanced of a MOS-structure silicon solar cell with transparent-ITO/oxide-film and basing voltage on the ITO electrode is experimentally demonstrated. High transmittance (> 80%) and conductivity (> 4.637×107 μs/cm) of ITO film is obtained using a thermal sputtering deposition. The antireflective characteristics of ITO/TiO2 and ITO/SiO2 are simulated and characterized. Photovoltaic current-voltage, external quantum efficiency, and performance as a function of the biasing voltage are measured. The conversion efficiency increasing from 14.06% to 19.68% is obtained for the proposed MOS cell at 4 V biasing, compared to at 0 V one.
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