{"title":"射频磁控溅射生长高(100)取向金属LaNiO3","authors":"Xia Di, P. Muralt","doi":"10.1109/ISAF.2017.8000205","DOIUrl":null,"url":null,"abstract":"This paper discusses preparation and characterizations of LaNiO<inf>3</inf> (LNO) films deposited by RF magnetron sputtering on SiO<inf>2</inf>/Si and Pt/Ti/SiO<inf>2</inf>/Si substrates. Crystallinity and texture were influenced by the sputtering gas pressure and composition (Ar and O<inf>2</inf>), and the growth substrate. LNO films deposited at 6.4 mTorr with an Ar/O<inf>2</inf> flow ratio of 100/15 sccm showed the best (100) texture, and the lowest resistivity of 0.41 mΩ·cm after annealing. As seed layer for Pb(Zr<inf>0.52</inf>Ti<inf>0.48</inf>)O<inf>3</inf> (PZT) growth, LNO passes its texture to the PZT film, in as much as the (110)/(100) texture ratio was the same in both.","PeriodicalId":421889,"journal":{"name":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Highly (100)-oriented metallic LaNiO3 grown by RF magnetron sputtering\",\"authors\":\"Xia Di, P. Muralt\",\"doi\":\"10.1109/ISAF.2017.8000205\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper discusses preparation and characterizations of LaNiO<inf>3</inf> (LNO) films deposited by RF magnetron sputtering on SiO<inf>2</inf>/Si and Pt/Ti/SiO<inf>2</inf>/Si substrates. Crystallinity and texture were influenced by the sputtering gas pressure and composition (Ar and O<inf>2</inf>), and the growth substrate. LNO films deposited at 6.4 mTorr with an Ar/O<inf>2</inf> flow ratio of 100/15 sccm showed the best (100) texture, and the lowest resistivity of 0.41 mΩ·cm after annealing. As seed layer for Pb(Zr<inf>0.52</inf>Ti<inf>0.48</inf>)O<inf>3</inf> (PZT) growth, LNO passes its texture to the PZT film, in as much as the (110)/(100) texture ratio was the same in both.\",\"PeriodicalId\":421889,\"journal\":{\"name\":\"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISAF.2017.8000205\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF)/International Workshop on Acoustic Transduction Materials and Devices (IWATMD)/Piezoresponse Force Microscopy (PFM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISAF.2017.8000205","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Highly (100)-oriented metallic LaNiO3 grown by RF magnetron sputtering
This paper discusses preparation and characterizations of LaNiO3 (LNO) films deposited by RF magnetron sputtering on SiO2/Si and Pt/Ti/SiO2/Si substrates. Crystallinity and texture were influenced by the sputtering gas pressure and composition (Ar and O2), and the growth substrate. LNO films deposited at 6.4 mTorr with an Ar/O2 flow ratio of 100/15 sccm showed the best (100) texture, and the lowest resistivity of 0.41 mΩ·cm after annealing. As seed layer for Pb(Zr0.52Ti0.48)O3 (PZT) growth, LNO passes its texture to the PZT film, in as much as the (110)/(100) texture ratio was the same in both.
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