{"title":"具有1位分立功率控制的2.14 GHz GaN功率放大器","authors":"M. Mercanti, A. Cidronali, I. Magrini, G. Manes","doi":"10.1109/RWS.2010.5434154","DOIUrl":null,"url":null,"abstract":"This paper focuses a GaN HEMT power amplifier with 1-bit power control and provides experimental data. It relies on a new concept of power combining allowed by an adaptive gate bias control scheme. At 2.1 GHz CW the discrete power control technique enables a linear factor 3.3 efficiency enhancement at the maximum power back-off of 7 dB, while a maximum output power of 34 dBm and a peak drain efficiency of 35%.","PeriodicalId":334671,"journal":{"name":"2010 IEEE Radio and Wireless Symposium (RWS)","volume":"126 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 2.14 GHz GaN power amplifier with 1-bit discrete power control\",\"authors\":\"M. Mercanti, A. Cidronali, I. Magrini, G. Manes\",\"doi\":\"10.1109/RWS.2010.5434154\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper focuses a GaN HEMT power amplifier with 1-bit power control and provides experimental data. It relies on a new concept of power combining allowed by an adaptive gate bias control scheme. At 2.1 GHz CW the discrete power control technique enables a linear factor 3.3 efficiency enhancement at the maximum power back-off of 7 dB, while a maximum output power of 34 dBm and a peak drain efficiency of 35%.\",\"PeriodicalId\":334671,\"journal\":{\"name\":\"2010 IEEE Radio and Wireless Symposium (RWS)\",\"volume\":\"126 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-01-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Radio and Wireless Symposium (RWS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RWS.2010.5434154\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio and Wireless Symposium (RWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RWS.2010.5434154","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 2.14 GHz GaN power amplifier with 1-bit discrete power control
This paper focuses a GaN HEMT power amplifier with 1-bit power control and provides experimental data. It relies on a new concept of power combining allowed by an adaptive gate bias control scheme. At 2.1 GHz CW the discrete power control technique enables a linear factor 3.3 efficiency enhancement at the maximum power back-off of 7 dB, while a maximum output power of 34 dBm and a peak drain efficiency of 35%.
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