栅极优先TiAlN - p栅极，用于成本效益高的高k金属栅极实现

Proceedings of Technical Program of 2012 VLSI Technology, System and Application Pub Date : 2012-04-23 DOI:10.1109/VLSI-TSA.2012.6210155

C. Ni, X. Fu, N. Yoshida, O. Chan, M. Jin, H. Chen, S. Hung, R. Jakkaraju, S. Kesapragada, C. Lazik, R. Hung, S. Gandikota, C. Chang, A. Brand

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引用次数: 6

摘要

用于LSTP/LOP逻辑和DRAM外围应用的gate -first (GF)高k金属门(HKMG)需要一种高效、低成本的有效工作函数(eWF)解决方案。我们演示了TiAlN用于fet eWF调谐而没有明显的EOT, Jg和接口退化。因此，TiAlN被证明是实现流程友好和成本效益高的GF HKMG实施的关键推动者。

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Gate-first TiAlN P-gate electrode for cost effective high-k metal gate implementation

Gate-first (GF) high-k metal gate (HKMG) for LSTP/LOP logic and DRAM periphery applications requires an efficient and low-cost effective work function (eWF) solution. We demonstrated TiAlN for pFET eWF tuning without appreciable EOT, Jg, and interface degradation. Hence TiAlN is shown to be a key enabler to realize process-friendly and cost-effective GF HKMG implementation.

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Proceedings of Technical Program of 2012 VLSI Technology, System and Application

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