纳米光刻的替代掩模

D. Ingert
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INTRODUCTION Nanotechnology research is led by the demand for ever smaller device features that are required to improve perform- ance and decrease costs in microelectronics, communication and data storage. Lithographic methods are in the centre of this nanotechnology. Rapid replication of features below 50nm is currently a significantly unsolved problem. Generat- ing patterned surfaces at the nanoscale is beyond the limits of standard photolithography techniques. The wavelengths of photons limit the minimum feature sizes in the sub-100nm scale. Thus it appears that whatever technologies are used for fabrication in this region it does not represent simple engi- neering extensions of conventional photolithography. There exists an opportunity to introduce news ideas in replication of meso and nanostructures. Indeed, very few methods pro- vide the ability to work in the sub-50-nm scale (1-3). The well-established methods for the fabrication of nanometer- scale structures (2), such as scanning probe, electron and ion beam lithography provide resolution and integration density required for the industrials demands but the level of throughput rate is far below the requirement. There is a need for alternative simple techniques in order to save processing time and costs (4,5). This need has given rise to different kinds of approaches like, for example, nanoimprint lithogra- phy and soft lithography with the use of self-assembly monolayers (SAMs) (3,6,7). However, for both the mold fabrication problems remain unsolved. In this review we will focus on three techniques that try to reduce to the nanometer range, the size of the mask keep- ing a large surface coverage. The major difference between these procedures is related to the type of mask used while the standard techniques to pattern the substrate like metal depo- sition or ion-plasma etching are kept similar. The main re- quirements present in an efficient method for replication are flexibility in the engraved substrate, fidelity in the replica- tion, low density of defects and large patterned surface. Be- cause all of these characteristics are never present in a single method, it is necessary to combine techniques. Thus we present these three techniques and their extensions combined with others. The first technique is called colloidal lithogra- phy, the mask is a monodispersed-spheres template (typi- cally polystyrene beads with an average diameter of 200 nm). The second is the block copolymer lithography, block copolymers are made of two chemically different chains bonded covalently. When the blocks are incompatible, they spontaneously self-assemble into micro domains, this leads, at equilibrium, to an ordered structure which is utilized as lithographic mask. 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引用次数: 1

摘要

掩膜的应用来自于不同的研究领域,如胶体、聚合物或纳米材料,是一个新兴的领域。最近在这一领域的进展已经发展出各种实用的路线,这些路线具有克服或至少完成高成本光刻技术的巨大潜力。本文综述了三种试图将掩膜尺寸减小到纳米级的技术。这些程序之间的主要区别与所使用的口罩类型有关。第一种技术被称为胶体光刻,掩模是一种单分散珠模板。第二种是嵌段共聚物光刻技术,第三种是纳米晶体光刻技术,所用的掩模是纳米物体。介绍了这三部分的合成路线、改进方法、应用及局限性。为了提高微电子、通信和数据存储领域的性能和降低成本,对更小器件特性的需求引领了纳米技术的研究。光刻技术是纳米技术的核心。50nm以下特征的快速复制目前是一个悬而未决的问题。在纳米尺度上产生图案表面超出了标准光刻技术的限制。光子的波长限制了小于100纳米尺度的最小特征尺寸。因此,无论在该地区使用何种技术进行制造,都不代表传统光刻技术的简单工程扩展。在介观和纳米结构的复制中存在一个引入新思想的机会。事实上,很少有方法能够在50nm以下的尺度上工作(1-3)。成熟的纳米结构制造方法(2),如扫描探针、电子和离子束光刻,提供了工业需求所需的分辨率和集成密度,但吞吐量水平远远低于要求。为了节省处理时间和费用,有必要采用其他简单技术(4,5)。这种需求产生了不同类型的方法,例如,纳米压印光刻和使用自组装单层(SAMs)的软光刻(3,6,7)。然而,对于这两种模具的制造问题仍然没有得到解决。在这篇综述中,我们将重点介绍三种技术,试图减少到纳米范围内,掩膜的尺寸,保持一个大的表面覆盖。这些方法之间的主要区别在于所使用的掩模类型,而金属沉积或离子等离子体蚀刻等标准技术则保持相似。一种有效的复制方法的主要要求是雕刻基板的柔韧性,复制的保真度,低密度的缺陷和大的图案表面。由于所有这些特征在一种方法中永远不会出现,因此有必要将各种技术结合起来。因此,我们将介绍这三种技术及其与其他技术相结合的扩展。第一种技术被称为胶体光刻,掩模是一种单分散球体模板(通常是平均直径为200nm的聚苯乙烯珠)。第二种是嵌段共聚物光刻,嵌段共聚物是由两个化学性质不同的链共价结合而成。当块不相容时,它们自发地自组装成微域,这导致,在平衡状态下,一个有序的结构被用作光刻掩模。第三种技术是纳米晶体光刻,所用的掩模是纳米物体。
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Alternative Masks for Nanolithography
The use of masks coming from research field as different as colloids, polymers or nanomaterials is a recently emerging field. Recent advances in this area have developed a variety of practical routes which have a great potential to overcome or at least complete the high-cost lithographic techniques. This review focuses on three techniques that try to reduce to the nanometer range, the size of the mask. The major difference between these procedures is related to the type of mask used. The first technique is called colloidal lithography, the mask is a monodispersed-beads template. The second is the block copolymer lithography and the third technique is the nanocrystal lithography, the mask used is a nano-object. For these three parts, the synthetic routes, the improvements and the applications as well as the limitations will be pre- sented. I. INTRODUCTION Nanotechnology research is led by the demand for ever smaller device features that are required to improve perform- ance and decrease costs in microelectronics, communication and data storage. Lithographic methods are in the centre of this nanotechnology. Rapid replication of features below 50nm is currently a significantly unsolved problem. Generat- ing patterned surfaces at the nanoscale is beyond the limits of standard photolithography techniques. The wavelengths of photons limit the minimum feature sizes in the sub-100nm scale. Thus it appears that whatever technologies are used for fabrication in this region it does not represent simple engi- neering extensions of conventional photolithography. There exists an opportunity to introduce news ideas in replication of meso and nanostructures. Indeed, very few methods pro- vide the ability to work in the sub-50-nm scale (1-3). The well-established methods for the fabrication of nanometer- scale structures (2), such as scanning probe, electron and ion beam lithography provide resolution and integration density required for the industrials demands but the level of throughput rate is far below the requirement. There is a need for alternative simple techniques in order to save processing time and costs (4,5). This need has given rise to different kinds of approaches like, for example, nanoimprint lithogra- phy and soft lithography with the use of self-assembly monolayers (SAMs) (3,6,7). However, for both the mold fabrication problems remain unsolved. In this review we will focus on three techniques that try to reduce to the nanometer range, the size of the mask keep- ing a large surface coverage. The major difference between these procedures is related to the type of mask used while the standard techniques to pattern the substrate like metal depo- sition or ion-plasma etching are kept similar. The main re- quirements present in an efficient method for replication are flexibility in the engraved substrate, fidelity in the replica- tion, low density of defects and large patterned surface. Be- cause all of these characteristics are never present in a single method, it is necessary to combine techniques. Thus we present these three techniques and their extensions combined with others. The first technique is called colloidal lithogra- phy, the mask is a monodispersed-spheres template (typi- cally polystyrene beads with an average diameter of 200 nm). The second is the block copolymer lithography, block copolymers are made of two chemically different chains bonded covalently. When the blocks are incompatible, they spontaneously self-assemble into micro domains, this leads, at equilibrium, to an ordered structure which is utilized as lithographic mask. The third technique is the nanocrystal lithography, the mask used is a nano-object.
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