M. Camprini, A. Cidronali, I. Magrini, G. Collodi, L. Costanzo, G. Manes
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Ultra low DC power consumption In-P HITFET based differential oscillator
The monolithic integration of tunneling diodes (TDs) with other conventional semiconductor devices gives the opportunity to design ultra-low DC power consumption circuits by taking advantage of the intrinsic negative differential resistance (NDR) of TDs. In this paper, we present the design of a differential oscillator based on InP-HEMT/TD technology. The circuit is based on a couple of phase-locked 5.8 GHz VCOs. Each VCO draws a current of 1.1mA at 500mV and generates an output power of -9.0 dBm on a 50/spl Omega/ load.
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