{"title":"沉积玻璃层缺陷分析","authors":"J. J. Bart","doi":"10.1109/IRPS.1975.362686","DOIUrl":null,"url":null,"abstract":"This paper reviews the results of deposited glass layer analysis carried out during device failure analysis and characterization studies performed at the Rome Air Development Center. The Scanning Electron Microscope (SEM) was used as the principal analysis technique for this study. The variables under consideration were glass deposition method, device interconnect metallurgy, package type and device stress conditions. The effects of glass layer defects on device reliability are discussed along with qualification and screen tests aimed at eliminating batch-related problems.","PeriodicalId":369161,"journal":{"name":"13th International Reliability Physics Symposium","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1975-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis of Deposited Glass Layer Defects\",\"authors\":\"J. J. Bart\",\"doi\":\"10.1109/IRPS.1975.362686\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper reviews the results of deposited glass layer analysis carried out during device failure analysis and characterization studies performed at the Rome Air Development Center. The Scanning Electron Microscope (SEM) was used as the principal analysis technique for this study. The variables under consideration were glass deposition method, device interconnect metallurgy, package type and device stress conditions. The effects of glass layer defects on device reliability are discussed along with qualification and screen tests aimed at eliminating batch-related problems.\",\"PeriodicalId\":369161,\"journal\":{\"name\":\"13th International Reliability Physics Symposium\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1975-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"13th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1975.362686\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"13th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1975.362686","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper reviews the results of deposited glass layer analysis carried out during device failure analysis and characterization studies performed at the Rome Air Development Center. The Scanning Electron Microscope (SEM) was used as the principal analysis technique for this study. The variables under consideration were glass deposition method, device interconnect metallurgy, package type and device stress conditions. The effects of glass layer defects on device reliability are discussed along with qualification and screen tests aimed at eliminating batch-related problems.