{"title":"毫米波应用的波导到微带转换","authors":"Y. Shih, T. Ton, L. Bui","doi":"10.1109/MWSYM.1988.22077","DOIUrl":null,"url":null,"abstract":"Design and test data are presented for waveguide-to-microstrip probe transitions that cover millimeter-wave frequencies from 26 to 110 GHz. The broadband design provides a good transition for full-waveguide bandwidth (40%). Because of the compact structure, the measured insertion loss contributed by the transition is less than 0.1 dB in Ka-band, less than 0.2 dB in Q-band and V-band, and less than 0.35 dB in W-band. These transitions are useful for the device and circuit characterisation of millimeter-wave MICs and MMICs.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"156","resultStr":"{\"title\":\"Waveguide-to-microstrip transitions for millimeter-wave applications\",\"authors\":\"Y. Shih, T. Ton, L. Bui\",\"doi\":\"10.1109/MWSYM.1988.22077\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Design and test data are presented for waveguide-to-microstrip probe transitions that cover millimeter-wave frequencies from 26 to 110 GHz. The broadband design provides a good transition for full-waveguide bandwidth (40%). Because of the compact structure, the measured insertion loss contributed by the transition is less than 0.1 dB in Ka-band, less than 0.2 dB in Q-band and V-band, and less than 0.35 dB in W-band. These transitions are useful for the device and circuit characterisation of millimeter-wave MICs and MMICs.<<ETX>>\",\"PeriodicalId\":339513,\"journal\":{\"name\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"156\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1988.22077\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22077","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Waveguide-to-microstrip transitions for millimeter-wave applications
Design and test data are presented for waveguide-to-microstrip probe transitions that cover millimeter-wave frequencies from 26 to 110 GHz. The broadband design provides a good transition for full-waveguide bandwidth (40%). Because of the compact structure, the measured insertion loss contributed by the transition is less than 0.1 dB in Ka-band, less than 0.2 dB in Q-band and V-band, and less than 0.35 dB in W-band. These transitions are useful for the device and circuit characterisation of millimeter-wave MICs and MMICs.<>