低压二极管配置sige:C HBT触发ESD电源钳，使用200/285 GHz (fT/fMAX)凸基sige:C HBT器件

2004 Electrical Overstress/Electrostatic Discharge Symposium Pub Date : 2004-09-01 DOI:10.1109/EOSESD.2004.5272633

S. Voldman, E. Gebreselasie

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引用次数: 7

摘要

由于更快的晶体管是用BiCMOS SiGe技术生产的，因此需要低压触发ESD网络来实现良好的ESD保护。二极管配置的SiGe HBT触发元件用于SiGe C HBT电源钳位网络，该网络采用0.13 propm CMOS技术基础上的200/285 GHz fT/fMAX硅锗异质结双极晶体管(HBT)技术。

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Low-voltage diode-configured sige:C HBT triggered ESD power clamps using a raised extrinsic base 200/285 GHz (fT/fMAX) SiGe:C HBT device

As the faster transistors are produced in BiCMOS SiGe technology, low voltage trigger ESD networks will be required to achieve good ESD protection. Diode-configured SiGe HBT trigger elements are used in a SiGe C HBT power clamp network in a 200/285 GHz fT/fMAX silicon germanium heterojunction bipolar transistor (HBT) technology in a 0.13-propm CMOS technology base.

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2004 Electrical Overstress/Electrostatic Discharge Symposium

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