一种高功率(> 5w)温度稳定的射频MEMS金属接触开关,具有正交锚点和力增强塞

C. Patel, Gabriel M. Rebeiz
{"title":"一种高功率(> 5w)温度稳定的射频MEMS金属接触开关,具有正交锚点和力增强塞","authors":"C. Patel, Gabriel M. Rebeiz","doi":"10.1109/MWSYM.2011.5972717","DOIUrl":null,"url":null,"abstract":"This paper presents a temperature stable metal-contact RF MEMS switch capable of handling >5 W of RF power. The device achieves 0.7 – 1.5 mN of contact force for actuation voltages of 80 – 90 V, with a restoring force of 0.63 mN. Furthermore, the device is insensitive to stress effects and temperature. Temperature measurements showed excellent thermal stability - no deflection in the beam, and a change in pull-in voltage of only 4 V from 25 – 125 °C. The switch was tested under prolonged (>24 hrs) high-power RF conditions with excellent reliability.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"140 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"A high power (>5 W) temperature stable RF MEMS metal-contact switch with orthogonal anchors and force-enhancing stoppers\",\"authors\":\"C. Patel, Gabriel M. Rebeiz\",\"doi\":\"10.1109/MWSYM.2011.5972717\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a temperature stable metal-contact RF MEMS switch capable of handling >5 W of RF power. The device achieves 0.7 – 1.5 mN of contact force for actuation voltages of 80 – 90 V, with a restoring force of 0.63 mN. Furthermore, the device is insensitive to stress effects and temperature. Temperature measurements showed excellent thermal stability - no deflection in the beam, and a change in pull-in voltage of only 4 V from 25 – 125 °C. The switch was tested under prolonged (>24 hrs) high-power RF conditions with excellent reliability.\",\"PeriodicalId\":294862,\"journal\":{\"name\":\"2011 IEEE MTT-S International Microwave Symposium\",\"volume\":\"140 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE MTT-S International Microwave Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2011.5972717\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2011.5972717","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 19

摘要

本文提出了一种温度稳定的金属接触射频MEMS开关,能够处理> 5w的射频功率。当驱动电压为80 ~ 90v时,该装置可获得0.7 ~ 1.5 mN的接触力,恢复力为0.63 mN。此外,该装置对应力效应和温度不敏感。温度测量显示出优异的热稳定性-光束没有偏转,并且从25 - 125°C的拉入电压变化仅为4 V。该开关在长时间(>24小时)高功率射频条件下进行了测试,具有优异的可靠性。
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A high power (>5 W) temperature stable RF MEMS metal-contact switch with orthogonal anchors and force-enhancing stoppers
This paper presents a temperature stable metal-contact RF MEMS switch capable of handling >5 W of RF power. The device achieves 0.7 – 1.5 mN of contact force for actuation voltages of 80 – 90 V, with a restoring force of 0.63 mN. Furthermore, the device is insensitive to stress effects and temperature. Temperature measurements showed excellent thermal stability - no deflection in the beam, and a change in pull-in voltage of only 4 V from 25 – 125 °C. The switch was tested under prolonged (>24 hrs) high-power RF conditions with excellent reliability.
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