FeSe0.3Te0.7薄膜的微波有效阻抗和体表面阻抗

2013 International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves Pub Date : 2013-06-23 DOI:10.1109/MSMW.2013.6622176

A. Barannik, Y. Wu, Y.-S He, S. Luo, L. Cao, M. S. Kharchenko, N. Cherpak

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引用次数: 2

摘要

本工作旨在利用实验数据获得FeSe1-xTex的体(即本征)微波特性Rs(T)和Xs(T)，从而获得穿透深度λL(T)和整体复合电导率σ1(T)-i σ2(T)的温度依赖性。对我们的外延薄膜和同一化合物的单晶所得到的结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Microwave effective and bulk surface impedance of thin FeSe0.3Te0.7 film

This present work is aimed at obtaining bulk (i.e. intrinsic) microwave properties R_s(T) and X_s(T) of FeSe_1-xTe_x using our experimental data and thus to obtain temperature dependences of the penetration depth λ_L(T) and whole complex conductivity σ₁(T)-i σ₂(T). The results obtained for our thin epitaxial film and single crystal of the same compound are compared.

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2013 International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves

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