Jing Cao, Haiqing Lin, Y. Xiang, Chun-Fu Kao, K. Dyer
{"title":"用于嵌入式应用的10位1GSample/s的90纳米CMOS DAC","authors":"Jing Cao, Haiqing Lin, Y. Xiang, Chun-Fu Kao, K. Dyer","doi":"10.1109/CICC.2006.320871","DOIUrl":null,"url":null,"abstract":"A 90 nm CMOS 10-bit 1 GS/s current-steering D/A converter is presented. It is designed and optimized for next generation high-speed digital communication SoCs. With only five power/ground pins and a 10-bit architecture, 72 dB SFDR and 9.2 ENOB are measured with a full-scale 41.3 MHz input at 800 MS/s. At 1.05 GS/s, 68 dB SFDR is achieved for a full-scale 54.3 MHz input. It dissipates a core power of 49 mW, the lowest power consumption reported at this performance level, and occupies a die area of merely 0.36 mm2. The monolithic DAC is fabricated in TSMC 1P9M 90nm CMOS process","PeriodicalId":269854,"journal":{"name":"IEEE Custom Integrated Circuits Conference 2006","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":"{\"title\":\"A 10-bit 1GSample/s DAC in 90nm CMOS for Embedded Applications\",\"authors\":\"Jing Cao, Haiqing Lin, Y. Xiang, Chun-Fu Kao, K. Dyer\",\"doi\":\"10.1109/CICC.2006.320871\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 90 nm CMOS 10-bit 1 GS/s current-steering D/A converter is presented. It is designed and optimized for next generation high-speed digital communication SoCs. With only five power/ground pins and a 10-bit architecture, 72 dB SFDR and 9.2 ENOB are measured with a full-scale 41.3 MHz input at 800 MS/s. At 1.05 GS/s, 68 dB SFDR is achieved for a full-scale 54.3 MHz input. It dissipates a core power of 49 mW, the lowest power consumption reported at this performance level, and occupies a die area of merely 0.36 mm2. The monolithic DAC is fabricated in TSMC 1P9M 90nm CMOS process\",\"PeriodicalId\":269854,\"journal\":{\"name\":\"IEEE Custom Integrated Circuits Conference 2006\",\"volume\":\"96 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"17\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Custom Integrated Circuits Conference 2006\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.2006.320871\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Custom Integrated Circuits Conference 2006","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.2006.320871","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17
摘要
提出了一种90 nm CMOS 10位1gs /s电流转向数模转换器。它是为下一代高速数字通信soc而设计和优化的。仅使用5个电源/接地引脚和10位架构,在800 MS/s的41.3 MHz全尺寸输入下测量72 dB SFDR和9.2 ENOB。在1.05 GS/s下,满量程54.3 MHz输入可实现68 dB SFDR。它的核心功耗为49兆瓦,是该性能水平下报告的最低功耗,并且占据的芯片面积仅为0.36 mm2。单片DAC采用台积电1P9M 90nm CMOS工艺制造
A 10-bit 1GSample/s DAC in 90nm CMOS for Embedded Applications
A 90 nm CMOS 10-bit 1 GS/s current-steering D/A converter is presented. It is designed and optimized for next generation high-speed digital communication SoCs. With only five power/ground pins and a 10-bit architecture, 72 dB SFDR and 9.2 ENOB are measured with a full-scale 41.3 MHz input at 800 MS/s. At 1.05 GS/s, 68 dB SFDR is achieved for a full-scale 54.3 MHz input. It dissipates a core power of 49 mW, the lowest power consumption reported at this performance level, and occupies a die area of merely 0.36 mm2. The monolithic DAC is fabricated in TSMC 1P9M 90nm CMOS process