900 MHz 7.4 W SiGe异质结双极晶体管

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458) Pub Date : 1999-06-26 DOI:10.1109/HKEDM.1999.836426

Jinshu Zhang, H. Jia, P. Tsien, T. Lo, Z. Yang, Jie-An Huang, Yihui Wang, Luoguang Huang, C. Liang, M. Feng, Q. Lin

{"title":"900 MHz 7.4 W SiGe异质结双极晶体管","authors":"Jinshu Zhang, H. Jia, P. Tsien, T. Lo, Z. Yang, Jie-An Huang, Yihui Wang, Luoguang Huang, C. Liang, M. Feng, Q. Lin","doi":"10.1109/HKEDM.1999.836426","DOIUrl":null,"url":null,"abstract":"The SiGe heterojunction bipolar transistor (HBT) suitable for microwave power applications was fabricated by a simple planar process compatible with Si process. The current gain of the SiGe HBT is 70, and the breakdown voltages of the collector junction and emitter junction are about 28 V and 5 V respectively. In common emitter configuration and class C operation, the SiGe HBT with continuous wave output power of 7.4 W and power added efficiency of 53% and power gain of 8.7 dB was obtained at the frequency of 900 MHz. Hence, the emitter current linear density of the SiGe HBT with emitter region width of 6 /spl mu/m is 1.7 A/cm.","PeriodicalId":342844,"journal":{"name":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"900 MHz 7.4 W SiGe heterojunction bipolar transistor\",\"authors\":\"Jinshu Zhang, H. Jia, P. Tsien, T. Lo, Z. Yang, Jie-An Huang, Yihui Wang, Luoguang Huang, C. Liang, M. Feng, Q. Lin\",\"doi\":\"10.1109/HKEDM.1999.836426\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The SiGe heterojunction bipolar transistor (HBT) suitable for microwave power applications was fabricated by a simple planar process compatible with Si process. The current gain of the SiGe HBT is 70, and the breakdown voltages of the collector junction and emitter junction are about 28 V and 5 V respectively. In common emitter configuration and class C operation, the SiGe HBT with continuous wave output power of 7.4 W and power added efficiency of 53% and power gain of 8.7 dB was obtained at the frequency of 900 MHz. Hence, the emitter current linear density of the SiGe HBT with emitter region width of 6 /spl mu/m is 1.7 A/cm.\",\"PeriodicalId\":342844,\"journal\":{\"name\":\"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)\",\"volume\":\"57 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-06-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1999.836426\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1999.836426","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

采用与Si工艺兼容的简单平面工艺制备了微波功率用SiGe异质结双极晶体管(HBT)。SiGe HBT的电流增益为70，集电极结击穿电压约为28 V，发射极结击穿电压约为5 V。在共发射极配置和C类工作条件下，在900 MHz频率下获得了连续波输出功率为7.4 W、功率附加效率为53%、功率增益为8.7 dB的SiGe HBT。因此，当发射极区宽度为6 /spl mu/m时，SiGe HBT的发射极电流线性密度为1.7 A/cm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

900 MHz 7.4 W SiGe heterojunction bipolar transistor

The SiGe heterojunction bipolar transistor (HBT) suitable for microwave power applications was fabricated by a simple planar process compatible with Si process. The current gain of the SiGe HBT is 70, and the breakdown voltages of the collector junction and emitter junction are about 28 V and 5 V respectively. In common emitter configuration and class C operation, the SiGe HBT with continuous wave output power of 7.4 W and power added efficiency of 53% and power gain of 8.7 dB was obtained at the frequency of 900 MHz. Hence, the emitter current linear density of the SiGe HBT with emitter region width of 6 /spl mu/m is 1.7 A/cm.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings 1999 IEEE Hong Kong Electron Devices Meeting (Cat. No.99TH8458)

自引率

0.00%

发文量