室温下单层WS2与单个介电纳米球耦合的高质量因数法诺共振

Jie Fang, Kan Yao, Yuebing Zheng
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摘要

在二维过渡金属二硫族化合物(TMDs)与等离子体纳米结构耦合的可见区中,人们已经进行了大量的研究。然而,金属材料的固有损耗和TMD激子线宽在室温(RT)下至少几十meV不可避免地限制了Fano谐振的可实现Q因子。在此,我们将单层WS2与单个氢化非晶硅纳米球(SiNSs)集成在水中。在rt上观察到在a激子频率(2.0 eV)下明显的不对称Fano共振,其Q因子高达104。Fano拟合和改进的耦合模式理论都表明,与报道的值(~60 meV)相比,a激子线宽减少了~10 meV。这是由于WS2中trion的衰变增强。此外,定向范诺耦合可以通过从SiNS或WS2端激发混合动力来实现,为器件实现提供了更多的可能性。
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High-quality-factor Fano resonances in monolayer WS2 coupled with a single dielectric nanosphere at room temperature
Great efforts have been made to explore the Fano resonances in two-dimensional transition metal dichalcogenides (TMDs) coupled with plasmonic nanostructures in the visible region. However, the intrinsic losses of metallic materials and the TMD exciton linewidths of at least tens of meV at room temperature (RT) inevitably limit the achievable Q factor of the Fano resonance. Herein, we integrate a monolayer WS2 with single hydrogenated amorphous silicon nanospheres (SiNSs) in water. Pronounced asymmetric Fano resonances with a Q factor up to 104 at the A exciton frequency (2.0 eV) are observed at RT. Fano fitting and modified coupled-mode theory both suggest a decreased A exciton linewidth of ~10 meV as compared to the reported value (~60 meV). This is attributed to the enhanced decay of trion in WS2. Moreover, directional Fano coupling can be achieved by exciting the hybrid from the SiNS or WS2 side, providing more possibilities in device implementation.
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