Photoresist microbridge pattern optimization at 1μm using conventional photolithography technique

One of the delicate processes in semiconductor microfabrication is the photolithography. It is the process that sets the design dimensions on various parts of the device. In order to complete this process, two requirements need to be satisfied. First is to create, the exact dimensions and pattern as established in design phase, which in other word can be referred as the resolution of the images on the wafer. The second is the correct placement of the device pattern on the wafer relative to the crystal orientation of the wafer substrate. This is called alignment or registration of patterns in correct position. This registration requirement is similar to the correct alignment of the different floors of a building. It is easy to visualize that misalignment of elevator shafts and stair wells would render the building useless. In a circuit, the effects of misaligned mask layers can cause the entire circuit to fail. In this paper we have reported a couple of results that leads to photoresist development and optimization technique as a standard manufacturing process to form 1μm microbridge for later process of size reduction to form nanogap. Therefore, at the final stage of fabrication, a nano-diagnostic biochip device is developed to use it as a biomolecule detection biosensor. The development of biosensors is still an open field and much remains to be done before many of these bioelectronic devices become commercialized. In this research, the key factors such as resist thickness, post-exposure bake (PEB) time and developer concentration are taken into account to study the optimum measurements and process. The thickness of resist will affect the resolution of image transferred and developing time. Both PEB and developer concentration also has the tendency to affect the device pattern and developing time. As the result, the photoresist thickness is optimized at 1500nm, the developer RD6 concentration diluted at 10:25 (DI water: RD6) and PEB time optimized at 65s.