O. Botsula, E. Prokhorov, D. Aidan, I. A. Aidan, E. N. Zabajzan
{"title":"用蒙特卡罗方法计算氮化化合物NDC的频率依赖性","authors":"O. Botsula, E. Prokhorov, D. Aidan, I. A. Aidan, E. N. Zabajzan","doi":"10.1109/CRMICO.2010.5632570","DOIUrl":null,"url":null,"abstract":"The oscillation efficiency of nitride diodes operating in limitation of accumulation of the space charge (LSA) in the wide taraherz frequency range has been investigated. The maximal frequencies correspond to the existing regions of negative differential conductivity (NDP) 600 GHz for InN 800 GHz for GaN and 1200 GHz for AlN are showed.","PeriodicalId":237662,"journal":{"name":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Frequency dependences of NDC for nitride compound calculated by Monte-Carlo techniques\",\"authors\":\"O. Botsula, E. Prokhorov, D. Aidan, I. A. Aidan, E. N. Zabajzan\",\"doi\":\"10.1109/CRMICO.2010.5632570\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The oscillation efficiency of nitride diodes operating in limitation of accumulation of the space charge (LSA) in the wide taraherz frequency range has been investigated. The maximal frequencies correspond to the existing regions of negative differential conductivity (NDP) 600 GHz for InN 800 GHz for GaN and 1200 GHz for AlN are showed.\",\"PeriodicalId\":237662,\"journal\":{\"name\":\"2010 20th International Crimean Conference \\\"Microwave & Telecommunication Technology\\\"\",\"volume\":\"66 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 20th International Crimean Conference \\\"Microwave & Telecommunication Technology\\\"\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2010.5632570\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 20th International Crimean Conference \"Microwave & Telecommunication Technology\"","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2010.5632570","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Frequency dependences of NDC for nitride compound calculated by Monte-Carlo techniques
The oscillation efficiency of nitride diodes operating in limitation of accumulation of the space charge (LSA) in the wide taraherz frequency range has been investigated. The maximal frequencies correspond to the existing regions of negative differential conductivity (NDP) 600 GHz for InN 800 GHz for GaN and 1200 GHz for AlN are showed.