采用180nm Si CMOS技术的5端口电感的dc - 7ghz小面积分布式放大器

2006 IEEE Asian Solid-State Circuits Conference Pub Date : 2006-11-01 DOI:10.1109/ASSCC.2006.357926

T. Ito, D. Kawazoe, K. Okada, K. Masu

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引用次数: 8

摘要

本文提出了一种新型的小面积分布式放大器(DA)，它采用两个5端口电感器来代替八个电感器。DA采用标准的180纳米CMOS工艺制造，有6层金属层。DA的布局面积为0.33 mm2。它的功率增益为6.3 dB，在DC-7 GHz频段噪声系数为6 dB。

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A DC-7 GHz Small-Area Distributed Amplifier Using 5-port Inductors in a 180nm Si CMOS Technology

This paper proposes a novel small-area distributed amplifler (DA), which utilizes two 5-port inductors to replace eight inductors. The DA is fabricated using a standard 180 nm CMOS process with 6 metal layers. The layout area of DA is 0.33 mm2. It is about 50 % as large as conventional DAs, and it has power gain of 6.3 dB and noise figure of 6 dB at DC-7 GHz.

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2006 IEEE Asian Solid-State Circuits Conference

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