{"title":"用于CDMA手机应用的功率放大器的热特性","authors":"T. Nozu","doi":"10.1109/STHERM.2005.1412179","DOIUrl":null,"url":null,"abstract":"Thermal characterization of InGaP/GaAs HBT power amplifiers for CDMA cellular phone handsets has been demonstrated on the basis of DC measurements of the HBTs and 3D finite element modeling, which made the treatment of non-uniform heat flow in this problem possible. Evaluation of conductive adhesives in the actual power amplifier environment has also been carried out. The finite element modeling including thermal contact resistance was applied to the HBTs with various numbers of emitter fingers and good agreement with measurements was obtained. For an adhesive with a high thermal conductance, it was found that 1/3 of the total thermal resistance of the power amplifier was attributable to the contact thermal resistance around GaAs/adhesive/heat sink bond line and that the bulk thermal contribution was negligible.","PeriodicalId":256936,"journal":{"name":"Semiconductor Thermal Measurement and Management IEEE Twenty First Annual IEEE Symposium, 2005.","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Thermal characterization of power amplifiers for CDMA cellular phone applications\",\"authors\":\"T. Nozu\",\"doi\":\"10.1109/STHERM.2005.1412179\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thermal characterization of InGaP/GaAs HBT power amplifiers for CDMA cellular phone handsets has been demonstrated on the basis of DC measurements of the HBTs and 3D finite element modeling, which made the treatment of non-uniform heat flow in this problem possible. Evaluation of conductive adhesives in the actual power amplifier environment has also been carried out. The finite element modeling including thermal contact resistance was applied to the HBTs with various numbers of emitter fingers and good agreement with measurements was obtained. For an adhesive with a high thermal conductance, it was found that 1/3 of the total thermal resistance of the power amplifier was attributable to the contact thermal resistance around GaAs/adhesive/heat sink bond line and that the bulk thermal contribution was negligible.\",\"PeriodicalId\":256936,\"journal\":{\"name\":\"Semiconductor Thermal Measurement and Management IEEE Twenty First Annual IEEE Symposium, 2005.\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor Thermal Measurement and Management IEEE Twenty First Annual IEEE Symposium, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/STHERM.2005.1412179\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Thermal Measurement and Management IEEE Twenty First Annual IEEE Symposium, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/STHERM.2005.1412179","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermal characterization of power amplifiers for CDMA cellular phone applications
Thermal characterization of InGaP/GaAs HBT power amplifiers for CDMA cellular phone handsets has been demonstrated on the basis of DC measurements of the HBTs and 3D finite element modeling, which made the treatment of non-uniform heat flow in this problem possible. Evaluation of conductive adhesives in the actual power amplifier environment has also been carried out. The finite element modeling including thermal contact resistance was applied to the HBTs with various numbers of emitter fingers and good agreement with measurements was obtained. For an adhesive with a high thermal conductance, it was found that 1/3 of the total thermal resistance of the power amplifier was attributable to the contact thermal resistance around GaAs/adhesive/heat sink bond line and that the bulk thermal contribution was negligible.
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