{"title":"一种分析分栅闪存电池中循环诱导降解组分的新方法","authors":"Y. Tkachev, A. Kotov","doi":"10.1109/IIRW.2013.6804173","DOIUrl":null,"url":null,"abstract":"A new simple and fast method for separation of cycling-induced degradation components in split-gate SuperFlash® cell is proposed. The method is based on the effect of tunneling current stabilization during linearly ramped erase voltage.","PeriodicalId":287904,"journal":{"name":"2013 IEEE International Integrated Reliability Workshop Final Report","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A new method for analysis of cycling-induced degradation components in split-gate flash memory cells\",\"authors\":\"Y. Tkachev, A. Kotov\",\"doi\":\"10.1109/IIRW.2013.6804173\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new simple and fast method for separation of cycling-induced degradation components in split-gate SuperFlash® cell is proposed. The method is based on the effect of tunneling current stabilization during linearly ramped erase voltage.\",\"PeriodicalId\":287904,\"journal\":{\"name\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2013.6804173\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2013.6804173","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new method for analysis of cycling-induced degradation components in split-gate flash memory cells
A new simple and fast method for separation of cycling-induced degradation components in split-gate SuperFlash® cell is proposed. The method is based on the effect of tunneling current stabilization during linearly ramped erase voltage.
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