{"title":"一种工作在非线性区域的低相位噪声10MHz微机械lamims -mode体振荡器","authors":"T. Niu, M. Palaniapan","doi":"10.1109/FREQ.2010.5556345","DOIUrl":null,"url":null,"abstract":"In this paper, a 10MHz micromechanical reference oscillator is presented by combining lamé-mode bulk resonator with Q above 200,000 and low noise off-chip interface circuitry. Benefiting from high quality factor as well as large energy storage capability of the bulk resonator, low phase noise performance has been achieved even when the resonator is operating in nonlinear region with a 4Vp-p oscillation output. A clear sine wave output signal is observed and the oscillator shows −138dBc/Hz noise floor and −132dBc/Hz 1kHz away from the carrier, which meets the cellular phase noise requirement of −130dBc/Hz at 1kHz offset for 13MHz GSM reference oscillators. Such oscillator does not require any gain limiting circuitry and hence makes the implementation much simpler and less noisy.","PeriodicalId":344989,"journal":{"name":"2010 IEEE International Frequency Control Symposium","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"A low phase noise 10MHz micromechanical lamé-mode bulk oscillator operating in nonlinear region\",\"authors\":\"T. Niu, M. Palaniapan\",\"doi\":\"10.1109/FREQ.2010.5556345\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a 10MHz micromechanical reference oscillator is presented by combining lamé-mode bulk resonator with Q above 200,000 and low noise off-chip interface circuitry. Benefiting from high quality factor as well as large energy storage capability of the bulk resonator, low phase noise performance has been achieved even when the resonator is operating in nonlinear region with a 4Vp-p oscillation output. A clear sine wave output signal is observed and the oscillator shows −138dBc/Hz noise floor and −132dBc/Hz 1kHz away from the carrier, which meets the cellular phase noise requirement of −130dBc/Hz at 1kHz offset for 13MHz GSM reference oscillators. Such oscillator does not require any gain limiting circuitry and hence makes the implementation much simpler and less noisy.\",\"PeriodicalId\":344989,\"journal\":{\"name\":\"2010 IEEE International Frequency Control Symposium\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Frequency Control Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/FREQ.2010.5556345\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Frequency Control Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FREQ.2010.5556345","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A low phase noise 10MHz micromechanical lamé-mode bulk oscillator operating in nonlinear region
In this paper, a 10MHz micromechanical reference oscillator is presented by combining lamé-mode bulk resonator with Q above 200,000 and low noise off-chip interface circuitry. Benefiting from high quality factor as well as large energy storage capability of the bulk resonator, low phase noise performance has been achieved even when the resonator is operating in nonlinear region with a 4Vp-p oscillation output. A clear sine wave output signal is observed and the oscillator shows −138dBc/Hz noise floor and −132dBc/Hz 1kHz away from the carrier, which meets the cellular phase noise requirement of −130dBc/Hz at 1kHz offset for 13MHz GSM reference oscillators. Such oscillator does not require any gain limiting circuitry and hence makes the implementation much simpler and less noisy.