低于0.1 /spl μ m的超薄栅极氧化物mosfet的低温工作

Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-05-01 DOI:10.1109/WOLTE.2002.1022450

B. Crețu, F. Balestra, G. Ghibaudo, G. Guégan

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引用次数: 6

摘要

本文的目的是研究超薄栅极氧化物实现的先进nmosfet在不同温度范围内的电学性能。研究了驱动和泄漏电流、载流子速度和短通道效应。为了评估器件寿命和可应用的最大漏极偏置，还讨论了低温下的热载流子退化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low temperature operation of ultra-thin gate oxide sub-0.1 /spl mu/m MOSFETs

The aim of this paper is to study the electrical properties of advanced nMOSFETs realized with ultra-thin gate oxide in various temperature ranges. The driving and leakage currents, carrier velocity and short channel effects are studied. Hot carrier degradation at low temperature is also addressed in order to evaluate the device lifetimes and the maximum drain biases that can be applied.

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Proceedings of the 5th European Workshop on Low Temperature Electronics

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