硅片上沉积NbN半导体薄膜77k ~ 300k低频噪声的研究

Proceedings of the 5th European Workshop on Low Temperature Electronics Pub Date : 2002-05-01 DOI:10.1109/WOLTE.2002.1022476

G. Leroy, J. Gest, P. Tabourier, J. Carru, P. Xavier, E. André, J. Chaussy

{"title":"硅片上沉积NbN半导体薄膜77k ~ 300k低频噪声的研究","authors":"G. Leroy, J. Gest, P. Tabourier, J. Carru, P. Xavier, E. André, J. Chaussy","doi":"10.1109/WOLTE.2002.1022476","DOIUrl":null,"url":null,"abstract":"In this paper we present, to our knowledge, the first low frequency noise characterization of two NbNx thin films deposited on a silicon substrate. Using a transmission line model (TLM) test structure, it is checked that the noise of the contacts is negligible. From 77 K to 300 K no generation-recombination (g-r) noise is observed and both samples exhibit only 1/f noise. By referring to noise studies in semiconductor materials, a first interpretation is suggested.","PeriodicalId":338080,"journal":{"name":"Proceedings of the 5th European Workshop on Low Temperature Electronics","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Study of the low frequency noise from 77 K to 300 K in NbN semiconductor thin films deposited on silicon\",\"authors\":\"G. Leroy, J. Gest, P. Tabourier, J. Carru, P. Xavier, E. André, J. Chaussy\",\"doi\":\"10.1109/WOLTE.2002.1022476\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present, to our knowledge, the first low frequency noise characterization of two NbNx thin films deposited on a silicon substrate. Using a transmission line model (TLM) test structure, it is checked that the noise of the contacts is negligible. From 77 K to 300 K no generation-recombination (g-r) noise is observed and both samples exhibit only 1/f noise. By referring to noise studies in semiconductor materials, a first interpretation is suggested.\",\"PeriodicalId\":338080,\"journal\":{\"name\":\"Proceedings of the 5th European Workshop on Low Temperature Electronics\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 5th European Workshop on Low Temperature Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WOLTE.2002.1022476\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 5th European Workshop on Low Temperature Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WOLTE.2002.1022476","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

在本文中，据我们所知，我们提出了沉积在硅衬底上的两个NbNx薄膜的第一个低频噪声表征。采用传输线模型(TLM)测试结构，验证了触点的噪声可以忽略不计。从77 K到300 K，没有观察到产生复合(g-r)噪声，两个样品都显示只有1/f噪声。参考半导体材料中的噪声研究，提出了第一种解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Study of the low frequency noise from 77 K to 300 K in NbN semiconductor thin films deposited on silicon

In this paper we present, to our knowledge, the first low frequency noise characterization of two NbNx thin films deposited on a silicon substrate. Using a transmission line model (TLM) test structure, it is checked that the noise of the contacts is negligible. From 77 K to 300 K no generation-recombination (g-r) noise is observed and both samples exhibit only 1/f noise. By referring to noise studies in semiconductor materials, a first interpretation is suggested.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings of the 5th European Workshop on Low Temperature Electronics

自引率

0.00%

发文量