LTCC中基于sip的60GHz发射机

M. K. Karim, M. Sun, L. Ong, Y. X. Guo, F. Lin, B. Luo
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引用次数: 1

摘要

将60GHz 4×4圆极化(CP)贴片阵列天线与90nm CMOS OOK调制器集成在低温共烧陶瓷(LTCC)衬底中形成SiP发射机。CP阵列显示出超过8GHz的3dB轴比(AR)带宽。它具有20°的3dB波束宽度和16.8dBi的峰值增益。在60GHz下进行器件建模,以准确模拟集总元件。CMOS调制器包括一个60GHz振荡器和可切换放大器,以提供OOK调制。最终制造的60GHz SiP发射机原型测量只有22×13×1.4mm3。
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SiP-based 60GHz transmitter in LTCC
A 60GHz 4×4 circular polarized (CP) patch array antenna with a 90nm CMOS OOK modulator are integrated in low temperature co-fired ceramic (LTCC) substrate to form a SiP transmitter. The CP array shows a 3dB axial ratio (AR) bandwidth of over 8GHz. It has a 3dB beamwidth of 20° and a peak gain of 16.8dBi. Device modeling at 60GHz is done to accurately simulate the lumped components. The CMOS modulator includes a 60GHz oscillator and switchable amplifiers to provide the OOK modulation. The final fabricated 60GHz SiP transmitter prototype measures only 22×13×1.4mm3.
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