S. Buetow, R. Herzer, Gunter Koenigsmann, M. Rossberg, A. Maul
{"title":"高功率、高频SiC-MOSFET系统，具有优异的性能、功率密度和可靠性","authors":"S. Buetow, R. Herzer, Gunter Koenigsmann, M. Rossberg, A. Maul","doi":"10.23919/ISPSD.2017.7988973","DOIUrl":null,"url":null,"abstract":"The paper presents the benefit of an optimized gate drive which can be achieved with a new generation of very low inductive 1200V, 400A SiC-MOSFET half bridge module and a new and adapted gate driver. After presenting the influence of the dead time to the static and dynamic losses of SiC-MOSFET and internal body diode a calculation of the possible output current versus frequency is performed. Finally the results are verified by calorimetrie measurements in a real inverter application.","PeriodicalId":202561,"journal":{"name":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"High power, high frequency SiC-MOSFET system with outstanding performance, power density and reliability\",\"authors\":\"S. Buetow, R. Herzer, Gunter Koenigsmann, M. Rossberg, A. Maul\",\"doi\":\"10.23919/ISPSD.2017.7988973\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents the benefit of an optimized gate drive which can be achieved with a new generation of very low inductive 1200V, 400A SiC-MOSFET half bridge module and a new and adapted gate driver. After presenting the influence of the dead time to the static and dynamic losses of SiC-MOSFET and internal body diode a calculation of the possible output current versus frequency is performed. Finally the results are verified by calorimetrie measurements in a real inverter application.\",\"PeriodicalId\":202561,\"journal\":{\"name\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"volume\":\"63 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-05-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ISPSD.2017.7988973\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ISPSD.2017.7988973","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High power, high frequency SiC-MOSFET system with outstanding performance, power density and reliability
The paper presents the benefit of an optimized gate drive which can be achieved with a new generation of very low inductive 1200V, 400A SiC-MOSFET half bridge module and a new and adapted gate driver. After presenting the influence of the dead time to the static and dynamic losses of SiC-MOSFET and internal body diode a calculation of the possible output current versus frequency is performed. Finally the results are verified by calorimetrie measurements in a real inverter application.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
