{"title":"一种基于130nm CMOS的10GHz可重构超宽带LNA","authors":"P. Amiri, H. Gharaee, A. Nabavi","doi":"10.1109/SMELEC.2006.380736","DOIUrl":null,"url":null,"abstract":"A 10 GHz reconfigurable CMOS LNA for UWB receiver is presented. The LNA is fabricated with the 0.13 mum standard CMOS process. Measurement of the chip is performed on a ADS simulator. In the UWB low-band (3 to 5.15 GHz), the broadband LNA exhibit a gain of 17.5-18.2 dB, noise figure of 3.4-5dB, input/output return loss better than 10 dB, and input P1dB of -17 dBm, respectively. In the band from 2.4 to 3 G Hz (covering a 802.11 b/g band), the LNA exhibit a gain of 17.5- 18 dB and noise figure less than 3.5 dB. From 5.2 to 6 GHz, the noise figure of the LNA becomes higher than 5 dB. The gain also decrease to about 15 dB. The DC supply is 1.8 V.","PeriodicalId":136703,"journal":{"name":"2006 IEEE International Conference on Semiconductor Electronics","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A 10GHz Reconfigurable UWB LNA in 130nm CMOS\",\"authors\":\"P. Amiri, H. Gharaee, A. Nabavi\",\"doi\":\"10.1109/SMELEC.2006.380736\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 10 GHz reconfigurable CMOS LNA for UWB receiver is presented. The LNA is fabricated with the 0.13 mum standard CMOS process. Measurement of the chip is performed on a ADS simulator. In the UWB low-band (3 to 5.15 GHz), the broadband LNA exhibit a gain of 17.5-18.2 dB, noise figure of 3.4-5dB, input/output return loss better than 10 dB, and input P1dB of -17 dBm, respectively. In the band from 2.4 to 3 G Hz (covering a 802.11 b/g band), the LNA exhibit a gain of 17.5- 18 dB and noise figure less than 3.5 dB. From 5.2 to 6 GHz, the noise figure of the LNA becomes higher than 5 dB. The gain also decrease to about 15 dB. The DC supply is 1.8 V.\",\"PeriodicalId\":136703,\"journal\":{\"name\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE International Conference on Semiconductor Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMELEC.2006.380736\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE International Conference on Semiconductor Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMELEC.2006.380736","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 10 GHz reconfigurable CMOS LNA for UWB receiver is presented. The LNA is fabricated with the 0.13 mum standard CMOS process. Measurement of the chip is performed on a ADS simulator. In the UWB low-band (3 to 5.15 GHz), the broadband LNA exhibit a gain of 17.5-18.2 dB, noise figure of 3.4-5dB, input/output return loss better than 10 dB, and input P1dB of -17 dBm, respectively. In the band from 2.4 to 3 G Hz (covering a 802.11 b/g band), the LNA exhibit a gain of 17.5- 18 dB and noise figure less than 3.5 dB. From 5.2 to 6 GHz, the noise figure of the LNA becomes higher than 5 dB. The gain also decrease to about 15 dB. The DC supply is 1.8 V.