一种基于130nm CMOS的10GHz可重构超宽带LNA

P. Amiri, H. Gharaee, A. Nabavi
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引用次数: 5

摘要

提出了一种用于超宽带接收机的10ghz可重构CMOS LNA。LNA采用0.13 μ m标准CMOS工艺制造。芯片的测量是在ADS模拟器上进行的。在UWB低频段(3 ~ 5.15 GHz),宽带LNA的增益为17.5 ~ 18.2 dB,噪声系数为3.4 ~ 5db,输入/输出回波损耗优于10 dB,输入P1dB为-17 dBm。在2.4 ~ 3g Hz频段(覆盖802.11 b/ G频段),LNA的增益为17.5 ~ 18db,噪声系数小于3.5 dB。在5.2 ~ 6ghz范围内,LNA噪声系数大于5db。增益也降低到约15db。直流电源为1.8 V。
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A 10GHz Reconfigurable UWB LNA in 130nm CMOS
A 10 GHz reconfigurable CMOS LNA for UWB receiver is presented. The LNA is fabricated with the 0.13 mum standard CMOS process. Measurement of the chip is performed on a ADS simulator. In the UWB low-band (3 to 5.15 GHz), the broadband LNA exhibit a gain of 17.5-18.2 dB, noise figure of 3.4-5dB, input/output return loss better than 10 dB, and input P1dB of -17 dBm, respectively. In the band from 2.4 to 3 G Hz (covering a 802.11 b/g band), the LNA exhibit a gain of 17.5- 18 dB and noise figure less than 3.5 dB. From 5.2 to 6 GHz, the noise figure of the LNA becomes higher than 5 dB. The gain also decrease to about 15 dB. The DC supply is 1.8 V.
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