{"title":"一种采用无源缓冲器的高输出功率、低谐波和低相位噪声的c波段振荡器MMIC","authors":"Sanghoon Sim, Songcheol Hong","doi":"10.1109/EMICC.2006.282779","DOIUrl":null,"url":null,"abstract":"A passive buffer of an oscillator to obtain high output power, low harmonics and low phase noise is presented. A cross-coupled oscillator with the passive buffer is fabricated using InGaP/GaAs HBT technology. The oscillation frequency is 6.96 GHz. The 2nd harmonic suppression is -36.23dBc in the one-side output power 9.43 dBm. The phase noise is -121.33 dBc/Hz at 1MHz offset. The chip size is 0.81 times 0.63 mm2. The performances are compared with those of the previously reported oscillators","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A C-Band Oscillator MMIC with High Output Power, Low Harmonics, and Low Phase Noise using Passive Buffer\",\"authors\":\"Sanghoon Sim, Songcheol Hong\",\"doi\":\"10.1109/EMICC.2006.282779\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A passive buffer of an oscillator to obtain high output power, low harmonics and low phase noise is presented. A cross-coupled oscillator with the passive buffer is fabricated using InGaP/GaAs HBT technology. The oscillation frequency is 6.96 GHz. The 2nd harmonic suppression is -36.23dBc in the one-side output power 9.43 dBm. The phase noise is -121.33 dBc/Hz at 1MHz offset. The chip size is 0.81 times 0.63 mm2. The performances are compared with those of the previously reported oscillators\",\"PeriodicalId\":269652,\"journal\":{\"name\":\"2006 European Microwave Integrated Circuits Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 European Microwave Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2006.282779\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282779","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A C-Band Oscillator MMIC with High Output Power, Low Harmonics, and Low Phase Noise using Passive Buffer
A passive buffer of an oscillator to obtain high output power, low harmonics and low phase noise is presented. A cross-coupled oscillator with the passive buffer is fabricated using InGaP/GaAs HBT technology. The oscillation frequency is 6.96 GHz. The 2nd harmonic suppression is -36.23dBc in the one-side output power 9.43 dBm. The phase noise is -121.33 dBc/Hz at 1MHz offset. The chip size is 0.81 times 0.63 mm2. The performances are compared with those of the previously reported oscillators
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