T. Ohsugi, Y. Iwata, H. Ohyama, M. Okada, T. Ohmoto, Y. Unno, T. Kohriki, N. Tamura, H. Miyata, M. Higuchi, K. Niwa, M. Nakamura, Y. Nagashima, M. Daigo, A. Murakami, S. Kobayashi, K. Yamamoto, K. Yamamura, Y. Muramaatsu
{"title":"用于SDC探测器的双面硅传感器(DSSS)原型","authors":"T. Ohsugi, Y. Iwata, H. Ohyama, M. Okada, T. Ohmoto, Y. Unno, T. Kohriki, N. Tamura, H. Miyata, M. Higuchi, K. Niwa, M. Nakamura, Y. Nagashima, M. Daigo, A. Murakami, S. Kobayashi, K. Yamamoto, K. Yamamura, Y. Muramaatsu","doi":"10.1109/NSSMIC.1992.301201","DOIUrl":null,"url":null,"abstract":"A full-size, double-sided, AC coupling sensor for the SDC central tracker was fabricated. The bias feeding resistor for each strip on both surfaces was implemented by a poly-Si line. The resistance was well controlled within a design value which is good enough to feed uniform bias to each strip. The ohmic-contact strip isolation was attained by inserting a p/sup +/ channel between n/sup +/ strips. The readout capacitance was minimized by making a narrow strip on the p/sup +/ side and by inserting a wide isolation p/sup +/ channel in the n/sup +/ strip side. The capacitance is measured to be 0.8 pF/cm on the p/sup +/ strip side and 1.13 pF/cm on the n/sup +/ strip side. The junction edge breakdown voltage has been pushed up to more than 150 V by an Al strip narrower than the implanted strip width.<<ETX>>","PeriodicalId":447239,"journal":{"name":"IEEE Conference on Nuclear Science Symposium and Medical Imaging","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-10-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Prototype double-sided silicon sensor (DSSS) for SDC detector\",\"authors\":\"T. Ohsugi, Y. Iwata, H. Ohyama, M. Okada, T. Ohmoto, Y. Unno, T. Kohriki, N. Tamura, H. Miyata, M. Higuchi, K. Niwa, M. Nakamura, Y. Nagashima, M. Daigo, A. Murakami, S. Kobayashi, K. Yamamoto, K. Yamamura, Y. Muramaatsu\",\"doi\":\"10.1109/NSSMIC.1992.301201\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A full-size, double-sided, AC coupling sensor for the SDC central tracker was fabricated. The bias feeding resistor for each strip on both surfaces was implemented by a poly-Si line. The resistance was well controlled within a design value which is good enough to feed uniform bias to each strip. The ohmic-contact strip isolation was attained by inserting a p/sup +/ channel between n/sup +/ strips. The readout capacitance was minimized by making a narrow strip on the p/sup +/ side and by inserting a wide isolation p/sup +/ channel in the n/sup +/ strip side. The capacitance is measured to be 0.8 pF/cm on the p/sup +/ strip side and 1.13 pF/cm on the n/sup +/ strip side. The junction edge breakdown voltage has been pushed up to more than 150 V by an Al strip narrower than the implanted strip width.<<ETX>>\",\"PeriodicalId\":447239,\"journal\":{\"name\":\"IEEE Conference on Nuclear Science Symposium and Medical Imaging\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-10-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Conference on Nuclear Science Symposium and Medical Imaging\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NSSMIC.1992.301201\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Conference on Nuclear Science Symposium and Medical Imaging","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NSSMIC.1992.301201","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Prototype double-sided silicon sensor (DSSS) for SDC detector
A full-size, double-sided, AC coupling sensor for the SDC central tracker was fabricated. The bias feeding resistor for each strip on both surfaces was implemented by a poly-Si line. The resistance was well controlled within a design value which is good enough to feed uniform bias to each strip. The ohmic-contact strip isolation was attained by inserting a p/sup +/ channel between n/sup +/ strips. The readout capacitance was minimized by making a narrow strip on the p/sup +/ side and by inserting a wide isolation p/sup +/ channel in the n/sup +/ strip side. The capacitance is measured to be 0.8 pF/cm on the p/sup +/ strip side and 1.13 pF/cm on the n/sup +/ strip side. The junction edge breakdown voltage has been pushed up to more than 150 V by an Al strip narrower than the implanted strip width.<>
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