{"title":"硅功率二极管器件的发展与展望","authors":"Qiang Yuan, Zehong Li, Mengqi Yang, Defu Sun, Yingxin Song, K. Zhu","doi":"10.1109/ICCCAS.2018.8769210","DOIUrl":null,"url":null,"abstract":"This paper describes the development of silicon power diodes from two aspects: single devices and composite devices. Single devices include Fast Recovery Diode, the combination of Schottky Barrier Diode and PN junction, MOS-based Super Barrier Rectifier and Buried Layer Rectifier. Composite devices include two novel integrated diodes-Charge Pump Switch and Cool Bypass Switch. This paper outlines the structure, principles, and applications of each power diode, and makes predictions about the future direction of power diodes at the end of the paper.","PeriodicalId":166878,"journal":{"name":"2018 10th International Conference on Communications, Circuits and Systems (ICCCAS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Silicon Power Diode Devices, Development and Future Prospects\",\"authors\":\"Qiang Yuan, Zehong Li, Mengqi Yang, Defu Sun, Yingxin Song, K. Zhu\",\"doi\":\"10.1109/ICCCAS.2018.8769210\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the development of silicon power diodes from two aspects: single devices and composite devices. Single devices include Fast Recovery Diode, the combination of Schottky Barrier Diode and PN junction, MOS-based Super Barrier Rectifier and Buried Layer Rectifier. Composite devices include two novel integrated diodes-Charge Pump Switch and Cool Bypass Switch. This paper outlines the structure, principles, and applications of each power diode, and makes predictions about the future direction of power diodes at the end of the paper.\",\"PeriodicalId\":166878,\"journal\":{\"name\":\"2018 10th International Conference on Communications, Circuits and Systems (ICCCAS)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 10th International Conference on Communications, Circuits and Systems (ICCCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCCAS.2018.8769210\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 10th International Conference on Communications, Circuits and Systems (ICCCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCCAS.2018.8769210","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Silicon Power Diode Devices, Development and Future Prospects
This paper describes the development of silicon power diodes from two aspects: single devices and composite devices. Single devices include Fast Recovery Diode, the combination of Schottky Barrier Diode and PN junction, MOS-based Super Barrier Rectifier and Buried Layer Rectifier. Composite devices include two novel integrated diodes-Charge Pump Switch and Cool Bypass Switch. This paper outlines the structure, principles, and applications of each power diode, and makes predictions about the future direction of power diodes at the end of the paper.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
