在一个完整的300毫米CMOS工艺制造的高迁移率simmosfet

Timothy Camenzind, A. Elsayed, F. Mohiyaddin, Ruoyu Li, S. Kubicek, J. Jussot, P. Van Dorpe, B. Govoreanu, I. Radu, D. Zumbühl
{"title":"在一个完整的300毫米CMOS工艺制造的高迁移率simmosfet","authors":"Timothy Camenzind, A. Elsayed, F. Mohiyaddin, Ruoyu Li, S. Kubicek, J. Jussot, P. Van Dorpe, B. Govoreanu, I. Radu, D. Zumbühl","doi":"10.1088/2633-4356/ac40f4","DOIUrl":null,"url":null,"abstract":"\n The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the device quality. For devices fabricated in a full CMOS process and of very thin oxide below a thickness of \\unit[10]{nm}, we report a record mobility of \\unit[$17.5\\times 10^{3}$]{cm$^2$/Vs} indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors.","PeriodicalId":345750,"journal":{"name":"Materials for Quantum Technology","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"High mobility SiMOSFETs fabricated in a full 300 mm CMOS process\",\"authors\":\"Timothy Camenzind, A. Elsayed, F. Mohiyaddin, Ruoyu Li, S. Kubicek, J. Jussot, P. Van Dorpe, B. Govoreanu, I. Radu, D. Zumbühl\",\"doi\":\"10.1088/2633-4356/ac40f4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the device quality. For devices fabricated in a full CMOS process and of very thin oxide below a thickness of \\\\unit[10]{nm}, we report a record mobility of \\\\unit[$17.5\\\\times 10^{3}$]{cm$^2$/Vs} indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors.\",\"PeriodicalId\":345750,\"journal\":{\"name\":\"Materials for Quantum Technology\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials for Quantum Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1088/2633-4356/ac40f4\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials for Quantum Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/2633-4356/ac40f4","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

半导体势垒界面的质量对量子信息处理中高质量可重复量子点的论证起着关键作用。在这项工作中,我们在未掺杂的Si衬底上测量了simmosfet霍尔棒,以研究器件质量。对于在全CMOS工艺中制造的器件和厚度低于\unit[10]{nm}的非常薄的氧化物,我们报告了\unit[$17.5\ × 10^{3}$]{cm$^2$/Vs}的创纪录迁移率,表明高质量的接口,适合未来的量子比特应用。我们还研究了栅极材料对迁移率的影响,并讨论了潜在的机制,为大规模量子处理器的进一步材料优化提供了见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
High mobility SiMOSFETs fabricated in a full 300 mm CMOS process
The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the device quality. For devices fabricated in a full CMOS process and of very thin oxide below a thickness of \unit[10]{nm}, we report a record mobility of \unit[$17.5\times 10^{3}$]{cm$^2$/Vs} indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving insight into further material optimization for large scale quantum processors.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Nitrogen-vacancy centers in diamond: discovery of additional electronic states Fabrication of tips for scanning probe magnetometry by diamond growth GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots Quantum materials engineering by structured cavity vacuum fluctuations Structural formation yield of GeV centers from implanted Ge in diamond
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1