R. Michnowski, D. Gryglewski, W. Wojtasiak, J. Jarkowski
{"title":"卓越目标网络的功率放大器设计","authors":"R. Michnowski, D. Gryglewski, W. Wojtasiak, J. Jarkowski","doi":"10.1109/MIKON.2006.4345359","DOIUrl":null,"url":null,"abstract":"This paper describes project of 4 W and 30 W power amplifiers worked out for Top Amplifier Research in European Team (TARGET) project in the confines of Sixth Framework of Programme Network of Excellence (NoE). The amplifiers based on the pHEMT and LDMOS transistors were designed over 890 to 915 MHz and 1850 to 1880 MHz respectively. The main aim of the project is to investigate and evaluate the existing skills basis and resources for designing and prototyping of complete power amplifiers.","PeriodicalId":315003,"journal":{"name":"2006 International Conference on Microwaves, Radar & Wireless Communications","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Power Amplifier Design for TARGET Network of Excellence\",\"authors\":\"R. Michnowski, D. Gryglewski, W. Wojtasiak, J. Jarkowski\",\"doi\":\"10.1109/MIKON.2006.4345359\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes project of 4 W and 30 W power amplifiers worked out for Top Amplifier Research in European Team (TARGET) project in the confines of Sixth Framework of Programme Network of Excellence (NoE). The amplifiers based on the pHEMT and LDMOS transistors were designed over 890 to 915 MHz and 1850 to 1880 MHz respectively. The main aim of the project is to investigate and evaluate the existing skills basis and resources for designing and prototyping of complete power amplifiers.\",\"PeriodicalId\":315003,\"journal\":{\"name\":\"2006 International Conference on Microwaves, Radar & Wireless Communications\",\"volume\":\"44 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 International Conference on Microwaves, Radar & Wireless Communications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MIKON.2006.4345359\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 International Conference on Microwaves, Radar & Wireless Communications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIKON.2006.4345359","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Power Amplifier Design for TARGET Network of Excellence
This paper describes project of 4 W and 30 W power amplifiers worked out for Top Amplifier Research in European Team (TARGET) project in the confines of Sixth Framework of Programme Network of Excellence (NoE). The amplifiers based on the pHEMT and LDMOS transistors were designed over 890 to 915 MHz and 1850 to 1880 MHz respectively. The main aim of the project is to investigate and evaluate the existing skills basis and resources for designing and prototyping of complete power amplifiers.
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