在90nm CMOS中嵌入双t SAB和圆形tdc量化器的8.5MHz 67.2dB SNDR带ELD补偿CTDSM

Chan-Hsiang Weng, Tzu-An Wei, E. Alpman, C. Fu, Yi-Ting Tseng, Tsung-Hsien Lin
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引用次数: 12

摘要

提出了一种低功耗的连续时间δ - σ调制器(CTDSM),该调制器采用单放大器双组(SAB)拓扑结构。该调制器采用了一种建议的双t SAB拓扑结构,其中通过向SAB的内部节点注入反馈信号来补偿多余的环路延迟(ELD),同时与额外的相位补偿电阻合作。提出了一种嵌入数据加权平均(DWA)函数的低功耗时间-数字转换器(TDC)作为量化器,以减轻反馈dac中的失配问题。采用90nm CMOS制造的CTDSM在8.5MHz信号带宽下的峰值SNDR为67.2dB,而在300MHz采样频率下的功耗为4.3mW, FoM为135fJ/ v.-step。
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An 8.5MHz 67.2dB SNDR CTDSM with ELD compensation embedded twin-T SAB and circular TDC-based quantizer in 90nm CMOS
A power-efficient continuous-time delta-sigma modulator (CTDSM) employing a single-amplifier biquad (SAB) based topology is proposed. The modulator incorporates a proposed twin-T SAB topology where the excess loop delay (ELD) is compensated by injecting a feedback signal into an internal node of the SAB while cooperating with an additional phase-compensation resistor. A low-power time-to-digital converter (TDC) with an embedded data weighted averaging (DWA) function is proposed as the quantizer, which mitigates the mismatch issue in the feedback DACs. Fabricated in 90nm CMOS, the proposed CTDSM achieves peak SNDR of 67.2dB over an 8.5MHz signal bandwidth, while consuming 4.3mW at 300MHz sampling frequency, and scores a FoM of 135fJ/conv.-step.
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