{"title":"反向双极晶体管的某些方面的改进,通过重组减少","authors":"J. C. Plunkett, J. Stone, A. Hyslop","doi":"10.1049/IJ-SSED:19780047","DOIUrl":null,"url":null,"abstract":"This paper describes the effect of recombination in the external base and epitaxial regions on the inverse current gain and related parameters of the n+pnn+ bipolar transistor. It is shown that the inverse current gain increases with the decrease in recombination in the external base region by use of the doublebase process. Improvement of the inverse gain is also shown with a decrease in epitaxial-layer thickness until it reaches a point of diminishing return at about one micrometre width between the space-charge regions. Breakdown phenomena related to the external base depth and the epitaxial layer thickness are also discussed.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Some aspects of inverse bipolar transistor improvement through recombination reduction\",\"authors\":\"J. C. Plunkett, J. Stone, A. Hyslop\",\"doi\":\"10.1049/IJ-SSED:19780047\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the effect of recombination in the external base and epitaxial regions on the inverse current gain and related parameters of the n+pnn+ bipolar transistor. It is shown that the inverse current gain increases with the decrease in recombination in the external base region by use of the doublebase process. Improvement of the inverse gain is also shown with a decrease in epitaxial-layer thickness until it reaches a point of diminishing return at about one micrometre width between the space-charge regions. Breakdown phenomena related to the external base depth and the epitaxial layer thickness are also discussed.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED:19780047\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19780047","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Some aspects of inverse bipolar transistor improvement through recombination reduction
This paper describes the effect of recombination in the external base and epitaxial regions on the inverse current gain and related parameters of the n+pnn+ bipolar transistor. It is shown that the inverse current gain increases with the decrease in recombination in the external base region by use of the doublebase process. Improvement of the inverse gain is also shown with a decrease in epitaxial-layer thickness until it reaches a point of diminishing return at about one micrometre width between the space-charge regions. Breakdown phenomena related to the external base depth and the epitaxial layer thickness are also discussed.