反向双极晶体管的某些方面的改进,通过重组减少

J. C. Plunkett, J. Stone, A. Hyslop
{"title":"反向双极晶体管的某些方面的改进,通过重组减少","authors":"J. C. Plunkett, J. Stone, A. Hyslop","doi":"10.1049/IJ-SSED:19780047","DOIUrl":null,"url":null,"abstract":"This paper describes the effect of recombination in the external base and epitaxial regions on the inverse current gain and related parameters of the n+pnn+ bipolar transistor. It is shown that the inverse current gain increases with the decrease in recombination in the external base region by use of the doublebase process. Improvement of the inverse gain is also shown with a decrease in epitaxial-layer thickness until it reaches a point of diminishing return at about one micrometre width between the space-charge regions. Breakdown phenomena related to the external base depth and the epitaxial layer thickness are also discussed.","PeriodicalId":127114,"journal":{"name":"Iee Journal on Solidstate and Electron Devices","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1978-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Some aspects of inverse bipolar transistor improvement through recombination reduction\",\"authors\":\"J. C. Plunkett, J. Stone, A. Hyslop\",\"doi\":\"10.1049/IJ-SSED:19780047\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the effect of recombination in the external base and epitaxial regions on the inverse current gain and related parameters of the n+pnn+ bipolar transistor. It is shown that the inverse current gain increases with the decrease in recombination in the external base region by use of the doublebase process. Improvement of the inverse gain is also shown with a decrease in epitaxial-layer thickness until it reaches a point of diminishing return at about one micrometre width between the space-charge regions. Breakdown phenomena related to the external base depth and the epitaxial layer thickness are also discussed.\",\"PeriodicalId\":127114,\"journal\":{\"name\":\"Iee Journal on Solidstate and Electron Devices\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1978-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iee Journal on Solidstate and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1049/IJ-SSED:19780047\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iee Journal on Solidstate and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1049/IJ-SSED:19780047","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文描述了外基极和外延区复合对n+pnn+双极晶体管反电流增益和相关参数的影响。结果表明,采用双基极工艺,随着外基极区复合的减少,反向电流增益增大。反向增益的改善还表现为外延层厚度的减小,直到它在空间电荷区之间约一微米的宽度处达到递减返回点。此外,还讨论了外延层厚度和外基底深度对击穿现象的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Some aspects of inverse bipolar transistor improvement through recombination reduction
This paper describes the effect of recombination in the external base and epitaxial regions on the inverse current gain and related parameters of the n+pnn+ bipolar transistor. It is shown that the inverse current gain increases with the decrease in recombination in the external base region by use of the doublebase process. Improvement of the inverse gain is also shown with a decrease in epitaxial-layer thickness until it reaches a point of diminishing return at about one micrometre width between the space-charge regions. Breakdown phenomena related to the external base depth and the epitaxial layer thickness are also discussed.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Three-dimensional analysis of the mode properties of stripe-geometry D.H.lasers Phase and group indices for double heterostructure lasers Growth and characteristics of GaInAsp/Inp double heterostructure lasers Thermal properties of semiconductor lasers, and the interpretation of thermal-resistance measurements Simplified theory for mode locking in injection lasers
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1