{"title":"InAs/InP自组装半导体量子线激子能量的计算","authors":"Xu Zihuan, L. Yumin, Yuan ZhongYuan, Yao Wenjie","doi":"10.1364/ACP.2009.FW3","DOIUrl":null,"url":null,"abstract":"Theoretical calculations of exciton in InAs/InP self-assembled quantum wires are presented in this paper. The Coulomb interaction between the electron and hole is calculated by using a fast Fourier transformation. In our simulations, strain effects are taken into consideration. Finally, we obtain the exciton binding energy in quantum wires by solving 1D Schrodinger equation along the quantum wire direction.","PeriodicalId":366119,"journal":{"name":"2009 Asia Communications and Photonics conference and Exhibition (ACP)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Calculation of exciton energy in InAs/InP self-assembled semiconductor quantum wires\",\"authors\":\"Xu Zihuan, L. Yumin, Yuan ZhongYuan, Yao Wenjie\",\"doi\":\"10.1364/ACP.2009.FW3\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Theoretical calculations of exciton in InAs/InP self-assembled quantum wires are presented in this paper. The Coulomb interaction between the electron and hole is calculated by using a fast Fourier transformation. In our simulations, strain effects are taken into consideration. Finally, we obtain the exciton binding energy in quantum wires by solving 1D Schrodinger equation along the quantum wire direction.\",\"PeriodicalId\":366119,\"journal\":{\"name\":\"2009 Asia Communications and Photonics conference and Exhibition (ACP)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-02-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 Asia Communications and Photonics conference and Exhibition (ACP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/ACP.2009.FW3\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Asia Communications and Photonics conference and Exhibition (ACP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/ACP.2009.FW3","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Calculation of exciton energy in InAs/InP self-assembled semiconductor quantum wires
Theoretical calculations of exciton in InAs/InP self-assembled quantum wires are presented in this paper. The Coulomb interaction between the electron and hole is calculated by using a fast Fourier transformation. In our simulations, strain effects are taken into consideration. Finally, we obtain the exciton binding energy in quantum wires by solving 1D Schrodinger equation along the quantum wire direction.
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