采用28纳米FDSOI技术的低噪声压控环形振荡器

2017 29th International Conference on Microelectronics (ICM) Pub Date : 2017-12-01 DOI:10.1109/ICM.2017.8268826

Hussein Bazzi, Mohammad Abou Chanine, Ali Mohsen, A. Harb

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引用次数: 3

摘要

本文提出了一种用于超宽带(UWB)应用的1V低相位噪声环压控振荡器(VCO)。该电路采用28纳米FDSOI技术实现。VCO延迟单元结构的特点是功耗为3.75 mW，并受益于通过晶体管体偏置进行的新型电压控制，从而在宽调谐范围内实现高性能。在29 ~ 49ghz频率范围内，工作在49ghz时，在1mhz频偏下，相位噪声最低为- 132 dBc/Hz。这些测量可获得−220 dBc/Hz的优异性能因数(FoM)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A low-noise voltage-controlled ring oscillator in 28-nm FDSOI technology

This paper presents a 1V low phase noise ring based voltage-controlled-oscillator (VCO) for ultra-wide band (UWB) applications. The circuit is implemented in a 28-nm FDSOI technology. The VCO delay cell structure is characterized by a 3.75 mW power consumption and benefits from a new voltage control through the transistor body bias in order to achieve high performance with a wide tuning range. In the frequency range from 29 to 49 GHz, the lowest phase noise result is −132 dBc/Hz at 1 MHz frequency offset while operating at 49 GHz. These measurements lead to an excellent Figure of Merit (FoM) of −220 dBc/Hz.

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2017 29th International Conference on Microelectronics (ICM)

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