CoFeB/MgO/CoFeB磁性隧道结的室温磁阻为230%

INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005. Pub Date : 2005-04-04 DOI:10.1063/1.1871344

D. Djayaprawira, K. Tsunekawa, M. Nagai, H. Maehara, S. Yamagata, N. Watanabe, S. Yuasa, K. Ando

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引用次数: 831

摘要

报道了室温下的磁阻比为230%。这是在自旋阀型磁隧道结中实现的，该磁隧道结采用MgO势垒层和在热氧化Si衬底上制备的非晶CoFeB铁磁电极。非晶CoFeB电极与多晶FeCo电极相比，在100 nm的MTJs中具有较高的均匀性。

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230% room temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions

The magnetoresistance ratio of 230% at room temperature is reported. This was achieved in spin-valve type magnetic tunnel junctions using MgO barrier layer and amorphous CoFeB ferromagnetic electrodes fabricated on thermally oxidized Si substrates. The amorphous CoFeB electrodes are of great advantage to the polycrystalline FeCo electrodes in achieving a high homogeneity in small 100 nm-sized MTJs.

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来源期刊

INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.

CiteScore

0.50

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0.00%

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