Xintong Zhu, Xiaoxuan Li, R. R. Nistala, Ju Dy Lim, C. Seet, Z. Mo
{"title":"用x射线衍射和x射线反射率表征不同N2流量下沉积的氮化钽薄膜的性能","authors":"Xintong Zhu, Xiaoxuan Li, R. R. Nistala, Ju Dy Lim, C. Seet, Z. Mo","doi":"10.1109/IPFA.2018.8452540","DOIUrl":null,"url":null,"abstract":"In this study, Tantalum Nitride (TaN) film deposited with different N2 gas flow is experimented to characterize the gas flow's impact on the property of the film. X-Ray Reflectivity (XRR) measurement is performed to check film thickness and density differences. X-Ray diffraction (XRD) is used to both observe the changes in crystal orientation of TaN crystallites and to quantify grain size. Clear trends are observed for film thickness, density, crystal orientation and grain size as N2 gas flow increases from 3% to 42%.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Property Characterization of Tantalum Nitride Film Deposited with Different N2 Flow by X-Ray Diffraction and X-Ray Reflectivity\",\"authors\":\"Xintong Zhu, Xiaoxuan Li, R. R. Nistala, Ju Dy Lim, C. Seet, Z. Mo\",\"doi\":\"10.1109/IPFA.2018.8452540\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, Tantalum Nitride (TaN) film deposited with different N2 gas flow is experimented to characterize the gas flow's impact on the property of the film. X-Ray Reflectivity (XRR) measurement is performed to check film thickness and density differences. X-Ray diffraction (XRD) is used to both observe the changes in crystal orientation of TaN crystallites and to quantify grain size. Clear trends are observed for film thickness, density, crystal orientation and grain size as N2 gas flow increases from 3% to 42%.\",\"PeriodicalId\":382811,\"journal\":{\"name\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2018.8452540\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452540","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Property Characterization of Tantalum Nitride Film Deposited with Different N2 Flow by X-Ray Diffraction and X-Ray Reflectivity
In this study, Tantalum Nitride (TaN) film deposited with different N2 gas flow is experimented to characterize the gas flow's impact on the property of the film. X-Ray Reflectivity (XRR) measurement is performed to check film thickness and density differences. X-Ray diffraction (XRD) is used to both observe the changes in crystal orientation of TaN crystallites and to quantify grain size. Clear trends are observed for film thickness, density, crystal orientation and grain size as N2 gas flow increases from 3% to 42%.
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