基于FinFET SRAM可变性的物理不可克隆功能(PUF)评估与优化

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126474

S. Zhang, B. Gao, Dong Wu, Huaqiang Wu, H. Qian

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引用次数: 2

摘要

FinFET的可变性是由工艺引起的小幅度偏差，在CMOS的缩放中是不能忽略的。这项工作利用可变性作为随机源的SRAM物理不可克隆功能(PUF)。这种变化的影响已经从器件级模拟到电路级。进一步研究了其对SRAM静态噪声裕度(SNM)和SRAM PUF可靠性的影响，以及两者之间的权衡关系。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Evaluation and optimization of physical unclonable function (PUF) based on the variability of FinFET SRAM

FinFET variability, which is a small amplitude deviation caused by process, cannot be ignored with the scaling of CMOS. This work utilizes the variability as the random source of SRAM Physical Unclonable function (PUF). The impact of the variation has been simulated from device-level to circuit-level. Further research has been done with its influence on SRAM static noise margin (SNM) and SRAM PUF reliability, and the trade-off relation between them.

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2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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