完全集成,高效,多输出电荷泵高密度微刺激器

Amin Rashidi, N. Yazdani, A. M. Sodagar
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引用次数: 10

摘要

本文提出了一种用于高密度微刺激器的小型集成电容高效电荷泵电路。所提出的电路比传统的交叉耦合电荷泵的效率提高了约35%。这是通过适当采用两种技术来实现的:(a)省略输出电容放电的不希望的导电路径,以及(b)将动态开关功率损耗减半。此外,提出了一种直观的物理布局,以防止闭锁现象。采用标准的$\mathbf{0.18}-\mu \mathbf{m}$ CMOS技术,设计了4级(1正级和3负级)电荷泵电路,并在晶体管级上进行了仿真。在$\mathbf{100}\ \mu \mathbf{a}$电流负载情况下,电荷泵在1.8V输入电压下可产生3.48V、−1.69V、−3.38V和−5.05V的输出电压,在一级和三级电路中平均功率效率分别为92.8%和86.8%。具有当前下沉/注入能力的每级产量允许不同的增产通道根据作业需要独立连接到不同的供应层。
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Fully-Integrated, High-Efficiency, Multi-Output Charge Pump for High-Density Microstimulators
This paper proposes a high-efficiency charge pump circuit with small integrated capacitors, dedicated to high-density microstimulators. The proposed circuit offers improvement of about 35% in the charge pump efficiency over the conventional cross-coupled charge pumps. This is achieved through proper employment of two techniques: (a) omitting the undesired conductive paths that discharge the output capacitor, and (b) discounting the dynamic switching power losses by half. Moreover, a straightforward physical layout is proposed to prevent the latchup phenomenon. Occupying 0.5 mm2 of silicon area, circuits for a 4-stage (1 positive stage and 3 negative stages) charge pump were designed and simulated in transistor level in a standard $\mathbf{0.18}-\mu \mathbf{m}$ CMOS technology. Designed for an implantable visual prosthesis, the charge pump generates output voltages of 3.48V, −1.69V, −3.38V, and −5.05V out of a 1.8V input voltage and exhibits average power efficiency of 92.8% and 86.8% for 1- and 3-stage circuits respectively, all in the case of a $\mathbf{100}\ \mu \mathbf{A}$ current load. An output per stage with current sinking/sourcing ability allows different stimulation channels to be independently connected to different supply levels according their operational needs.
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