{"title":"InGaSb和InAsSb XOI nFET的弹道性能比较","authors":"M. N. Alam, M. Islam, Md.R. Islam","doi":"10.1109/ICECE.2014.7026842","DOIUrl":null,"url":null,"abstract":"Ballistic performance of nanoscale InGaSb and InAsSb XOI n-FET is compared using non equilibrium greens function (NEGF) method. The simulation results demonstrate that the ballistic performance is opposite to what is expected if the devices were long channel MOSFET. Although InAsSb possesses higher bulk electron mobility, but in ballistic regime, InGaSb gives higher drain current along with better subthreshold characteristic and reduced threshold voltage, if the off state current for both material is made equal.","PeriodicalId":335492,"journal":{"name":"8th International Conference on Electrical and Computer Engineering","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Ballistic performance comparison of InGaSb and InAsSb XOI nFET\",\"authors\":\"M. N. Alam, M. Islam, Md.R. Islam\",\"doi\":\"10.1109/ICECE.2014.7026842\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ballistic performance of nanoscale InGaSb and InAsSb XOI n-FET is compared using non equilibrium greens function (NEGF) method. The simulation results demonstrate that the ballistic performance is opposite to what is expected if the devices were long channel MOSFET. Although InAsSb possesses higher bulk electron mobility, but in ballistic regime, InGaSb gives higher drain current along with better subthreshold characteristic and reduced threshold voltage, if the off state current for both material is made equal.\",\"PeriodicalId\":335492,\"journal\":{\"name\":\"8th International Conference on Electrical and Computer Engineering\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"8th International Conference on Electrical and Computer Engineering\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICECE.2014.7026842\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"8th International Conference on Electrical and Computer Engineering","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICECE.2014.7026842","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ballistic performance comparison of InGaSb and InAsSb XOI nFET
Ballistic performance of nanoscale InGaSb and InAsSb XOI n-FET is compared using non equilibrium greens function (NEGF) method. The simulation results demonstrate that the ballistic performance is opposite to what is expected if the devices were long channel MOSFET. Although InAsSb possesses higher bulk electron mobility, but in ballistic regime, InGaSb gives higher drain current along with better subthreshold characteristic and reduced threshold voltage, if the off state current for both material is made equal.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
