Y. Ogasahara, M. Hioki, T. Nakagawa, T. Sekigawa, T. Tsutsumi, H. Koike
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Measurement of Vth variation due to STI stress and inverse narrow channel effect at ultra-low voltage in a variability-suppressed process
This paper demonstrates notable impact of Vth shift due to STI-induced dopant redistribution on ultra-low voltage designs. 2.5X Ion change at ultra-low voltages due to STI was measured on a 65nm SOTB CMOS process. Serious 6X Ion change due to inverse narrow channel effects was also observed. We propose ring oscillator based measurement procedure observing Vth shift by exploiting flexible Vth controllability by backgate biasing of SOTB process.
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