NSP:堆叠平面和垂直栅极全能mosfet的物理紧凑模型

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838369

O. Rozeau, S. Martinie, T. Poiroux, F. Triozon, S. Barraud, J. Lacord, Y.-M. Niquet, C. Tabone, R. Coquand, E. Augendre, M. Vinet, O. Faynot, J. Barbe

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引用次数: 11

摘要

在这项工作中，提出了纳米线/纳米片(NW/NS)栅极全能(GAA) MOSFET的预测和物理紧凑模型。基于一种包含量子约束的表面势计算新方法，该模型能够处理任意NW/NS横截面形状的堆叠平面和垂直GAA mosfet(圆形，方形，矩形)。这种基于纳米线表面电位(NSP)的模型，通过数值模拟和实验数据验证，在GAA mosfet的所有工作状态下都是非常准确的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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NSP: Physical compact model for stacked-planar and vertical Gate-All-Around MOSFETs

In this work, a predictive and physical compact model for NanoWire/NanoSheet (NW/NS) Gate-All-Around (GAA) MOSFET is presented. Based on a novel methodology for the calculation of the surface potential including quantum confinement, this model is able to handle arbitrary NW/NS cross-section shape of stacked-planar and vertical GAA MOSFETs (circular, square, rectangular). This Nanowire Surface Potential (NSP) based model, validated both by numerical simulations and experimental data, is demonstrated to be very accurate in all operation regimes of GAA MOSFETs.

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2016 IEEE International Electron Devices Meeting (IEDM)

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