{"title":"具有垂直极性反转异质结构的增强模式单门双极多通道GaN HEMT的设计","authors":"P. Feng, K. Teo, T. Oishi, K. Yamanaka, R. Ma","doi":"10.1109/ISPSD.2013.6694481","DOIUrl":null,"url":null,"abstract":"We propose the design and simulation study of novel gallium nitride (GaN) devices, consisting of nitride stacks with different polarity, to provide multiple channels by flexible gate(s) control. Calibrated TCAD device simulations visualize device characteristics of 0.62-μm-gate-length multi-channel transistors. E-mode operations demonstrate a positive small threshold voltage V<sub>th</sub> below 2 V at V<sub>ds</sub> = 0.1 V for all multichannel devices, and a high on-state current I<sub>on</sub> (V<sub>gs</sub> = V<sub>ds</sub> = 4 V) up to 4 A/mm achieved by 4 channels induced within the device.","PeriodicalId":175520,"journal":{"name":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Design of enhancement mode single-gate and doublegate multi-channel GaN HEMT with vertical polarity inversion heterostructure\",\"authors\":\"P. Feng, K. Teo, T. Oishi, K. Yamanaka, R. Ma\",\"doi\":\"10.1109/ISPSD.2013.6694481\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose the design and simulation study of novel gallium nitride (GaN) devices, consisting of nitride stacks with different polarity, to provide multiple channels by flexible gate(s) control. Calibrated TCAD device simulations visualize device characteristics of 0.62-μm-gate-length multi-channel transistors. E-mode operations demonstrate a positive small threshold voltage V<sub>th</sub> below 2 V at V<sub>ds</sub> = 0.1 V for all multichannel devices, and a high on-state current I<sub>on</sub> (V<sub>gs</sub> = V<sub>ds</sub> = 4 V) up to 4 A/mm achieved by 4 channels induced within the device.\",\"PeriodicalId\":175520,\"journal\":{\"name\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISPSD.2013.6694481\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISPSD.2013.6694481","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of enhancement mode single-gate and doublegate multi-channel GaN HEMT with vertical polarity inversion heterostructure
We propose the design and simulation study of novel gallium nitride (GaN) devices, consisting of nitride stacks with different polarity, to provide multiple channels by flexible gate(s) control. Calibrated TCAD device simulations visualize device characteristics of 0.62-μm-gate-length multi-channel transistors. E-mode operations demonstrate a positive small threshold voltage Vth below 2 V at Vds = 0.1 V for all multichannel devices, and a high on-state current Ion (Vgs = Vds = 4 V) up to 4 A/mm achieved by 4 channels induced within the device.
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