高速低功耗384×288基于MWIR和LWIR MCT的FPA读出集成电路

2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices Pub Date : 2015-08-13 DOI:10.1109/EDM.2015.7184549

S. A. Dvoretskiy, A. Zverev, Yu. S. Makarov, E. Mikhantiev

{"title":"高速低功耗384×288基于MWIR和LWIR MCT的FPA读出集成电路","authors":"S. A. Dvoretskiy, A. Zverev, Yu. S. Makarov, E. Mikhantiev","doi":"10.1109/EDM.2015.7184549","DOIUrl":null,"url":null,"abstract":"The review of architecture and characteristics of developed 384×288 silicon readout integrated circuit with 25 μm pixel pitch for MWIR and LWIR MCT based FPA is presented. The main characteristics of the ROIC: pixel cell electron capacity > 21 Me-, maximum output pixel rate per one video output 20 MHz, maximum dissipation power <; 100 mW.","PeriodicalId":213801,"journal":{"name":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"High speed low power 384×288 readout integrated circuit for MWIR and LWIR MCT based FPA\",\"authors\":\"S. A. Dvoretskiy, A. Zverev, Yu. S. Makarov, E. Mikhantiev\",\"doi\":\"10.1109/EDM.2015.7184549\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The review of architecture and characteristics of developed 384×288 silicon readout integrated circuit with 25 μm pixel pitch for MWIR and LWIR MCT based FPA is presented. The main characteristics of the ROIC: pixel cell electron capacity > 21 Me-, maximum output pixel rate per one video output 20 MHz, maximum dissipation power <; 100 mW.\",\"PeriodicalId\":213801,\"journal\":{\"name\":\"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-08-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDM.2015.7184549\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2015.7184549","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文综述了已开发的用于MWIR和LWIR MCT FPA的25 μm像素间距384×288硅读出集成电路的结构和特性。ROIC的主要特性:像素单元电子容量> 21 Me-，最大输出像素率每视频输出20 MHz，最大耗散功率<;100兆瓦。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High speed low power 384×288 readout integrated circuit for MWIR and LWIR MCT based FPA

The review of architecture and characteristics of developed 384×288 silicon readout integrated circuit with 25 μm pixel pitch for MWIR and LWIR MCT based FPA is presented. The main characteristics of the ROIC: pixel cell electron capacity > 21 Me-, maximum output pixel rate per one video output 20 MHz, maximum dissipation power <; 100 mW.

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2015 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices

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