按比例放大的激光门控泵浦晶闸管(LGPT)器件在KrF IFE(惯性聚变能)工作参数下的应用

D. Weidenheimer, D. Morton, G. James, D. Giorgi, T. Navapanich, D. Knudsen, R. Knight
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引用次数: 5

摘要

LGPT设备在di/dt和单位面积动作方面都符合规范,并且在系统重复速率(5- 7pps)下的耐久性超过107次。目前的器件代表了用于近期和长期KrF IFE激光驱动器的最小尺寸构件单元,并且它们采用板载光源直接照明硅晶闸管结构。进行耐久性测试的设备的典型工作参数为16.4 kV正向阻塞,峰值电流为1.5至2.5 kA/ cm2,脉宽为800 ns, di/dt高达25 kA/usec/cm2。有两种实用的方法可以直接照亮硅:通过电极表面,这是过去5年来一直在实践的,还有一种新方法是采用侧面发光几何形状的激光棒阵列。该器件最近的应用是FE2激光前置放大器的改装。该驱动程序采用可扩展到KrF IFE发电的拓扑结构。它是一个快速的马克思充电,单级磁脉冲压缩机。2004年交付的“马克思”号是燃气开关的,但专门设计用于改装该计划的第一代LGPT。全尺寸KrF ife级脉冲功率压缩机也已概念化,并将在后续项目中用于全尺寸设计,以进一步开发该技术
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Scaled-Up LGPT (Laser Gated and Pumped Thyristor) Devices at KrF IFE (Inertial Fusion Energy) Operating Parameters
The LGPT devices are performing to specification in both di/dt and action per unit area, and have demonstrated durability beyond 107 shots at system rep-rate (5-7 pps). The present devices represent minimum-size building-block units for use in near and far-term KrF IFE laser drivers, and they employ on-board optical sources for direct illumination of the silicon thyristor structure. Typical operating parameters for the devices undergoing durability tests are 16.4 kV forward blocking, peak currents of 1.5 to 2.5 kA per cm2, for an 800 ns pulsewidth, and di/dt's of up to 25 kA/usec/cm2. Two practical methods are there for directly illuminating the silicon: through the electrode surfaces as has been practiced for the past 5 years, and a new method employing the laser bar arrays in a side-shine geometry. The nearest-term application for the devices is in the retro-fitting of the FE2 laser pre-amplifier. This driver employs a topology that is scaleable to KrF IFE power generation. It is a fast Marx-charged, single-stage magnetic pulse compressor. The Marx, as delivered in 2004, is gas-switched, but specifically designed to be retro-fitted with the first generation of the program's LGPT's. Full scale KrF IFE-class pulsed power compressors have also been conceptualized, and will be utilized in those full-scale designs in a follow-up program to further develop the technology
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