采用工作点相关退化和gm/ID方法进行老化感知设计

Nico Hellwege, N. Heidmann, D. Peters-Drolshagen, S. Paul
{"title":"采用工作点相关退化和gm/ID方法进行老化感知设计","authors":"Nico Hellwege, N. Heidmann, D. Peters-Drolshagen, S. Paul","doi":"10.1109/IIRW.2013.6804172","DOIUrl":null,"url":null,"abstract":"Effects like NBTI and HCI are degrading the characteristics of analog circuits. Available countermeasures to maintain system performances often include the use of optimizers or other external tools to size devices appropriately, which give no insight in relations between degradation and circuit parameters for the designer. This paper proposes an extension of the gm/ID sizing method by considering aged transistor parameters for fresh circuit design. A possible usage scenario for this investigation is given by optimizing a simple circuit towards higher reliability. The degradation in amplification of a common source amplifier is reduced by 19 % for a full time operation of 10 years.","PeriodicalId":287904,"journal":{"name":"2013 IEEE International Integrated Reliability Workshop Final Report","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Using operating point-dependent degradation and gm/ID method for aging-aware design\",\"authors\":\"Nico Hellwege, N. Heidmann, D. Peters-Drolshagen, S. Paul\",\"doi\":\"10.1109/IIRW.2013.6804172\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Effects like NBTI and HCI are degrading the characteristics of analog circuits. Available countermeasures to maintain system performances often include the use of optimizers or other external tools to size devices appropriately, which give no insight in relations between degradation and circuit parameters for the designer. This paper proposes an extension of the gm/ID sizing method by considering aged transistor parameters for fresh circuit design. A possible usage scenario for this investigation is given by optimizing a simple circuit towards higher reliability. The degradation in amplification of a common source amplifier is reduced by 19 % for a full time operation of 10 years.\",\"PeriodicalId\":287904,\"journal\":{\"name\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Integrated Reliability Workshop Final Report\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2013.6804172\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Integrated Reliability Workshop Final Report","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2013.6804172","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

NBTI和HCI等效应正在降低模拟电路的特性。维持系统性能的可用对策通常包括使用优化器或其他外部工具来适当地调整器件的尺寸,这对设计者来说并没有深入了解退化和电路参数之间的关系。本文提出了一种将老化晶体管参数纳入新电路设计的gm/ID尺寸法的扩展。通过优化一个简单的电路以获得更高的可靠性,给出了这项研究的一个可能的使用场景。在10年的全时间运行中,共源放大器的放大衰减降低了19%。
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Using operating point-dependent degradation and gm/ID method for aging-aware design
Effects like NBTI and HCI are degrading the characteristics of analog circuits. Available countermeasures to maintain system performances often include the use of optimizers or other external tools to size devices appropriately, which give no insight in relations between degradation and circuit parameters for the designer. This paper proposes an extension of the gm/ID sizing method by considering aged transistor parameters for fresh circuit design. A possible usage scenario for this investigation is given by optimizing a simple circuit towards higher reliability. The degradation in amplification of a common source amplifier is reduced by 19 % for a full time operation of 10 years.
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