{"title":"快速热CVD制备多晶硅薄膜和太阳能电池","authors":"Yuwen Zhao, X. Jiang, Wenjing Wang, Zhongming Li, Yuan Yu, Xianbo Liao","doi":"10.1109/PVSC.1997.654193","DOIUrl":null,"url":null,"abstract":"Polycrystalline silicon (poly-Si) films (10-20 /spl mu/m) were grown from SiH/sub 2/Cl/sub 2/ or SiCl/sub 4/ by a rapid thermal chemical vapor deposition (RTCVD) technique, with a growth rate up to 100 A/s at the substrate temperature (T/sub s/) of above 1030/spl deg/C. The average grain size and carrier mobility of the films were found to be dependent on T/sub s/ and the substrate materials. By using the poly-Si film, the solar cells have been prepared on the heavily phosphorus-doped Si wafer, and the energy conversion efficiency of the best cell is 9.88% (AM 1.5G, 100 mW/cm/sup 2/, 25/spl deg/C).","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Poly-silicon thin films and solar cells prepared by rapid thermal CVD\",\"authors\":\"Yuwen Zhao, X. Jiang, Wenjing Wang, Zhongming Li, Yuan Yu, Xianbo Liao\",\"doi\":\"10.1109/PVSC.1997.654193\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Polycrystalline silicon (poly-Si) films (10-20 /spl mu/m) were grown from SiH/sub 2/Cl/sub 2/ or SiCl/sub 4/ by a rapid thermal chemical vapor deposition (RTCVD) technique, with a growth rate up to 100 A/s at the substrate temperature (T/sub s/) of above 1030/spl deg/C. The average grain size and carrier mobility of the films were found to be dependent on T/sub s/ and the substrate materials. By using the poly-Si film, the solar cells have been prepared on the heavily phosphorus-doped Si wafer, and the energy conversion efficiency of the best cell is 9.88% (AM 1.5G, 100 mW/cm/sup 2/, 25/spl deg/C).\",\"PeriodicalId\":251166,\"journal\":{\"name\":\"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1997.654193\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1997.654193","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Poly-silicon thin films and solar cells prepared by rapid thermal CVD
Polycrystalline silicon (poly-Si) films (10-20 /spl mu/m) were grown from SiH/sub 2/Cl/sub 2/ or SiCl/sub 4/ by a rapid thermal chemical vapor deposition (RTCVD) technique, with a growth rate up to 100 A/s at the substrate temperature (T/sub s/) of above 1030/spl deg/C. The average grain size and carrier mobility of the films were found to be dependent on T/sub s/ and the substrate materials. By using the poly-Si film, the solar cells have been prepared on the heavily phosphorus-doped Si wafer, and the energy conversion efficiency of the best cell is 9.88% (AM 1.5G, 100 mW/cm/sup 2/, 25/spl deg/C).