快速热CVD制备多晶硅薄膜和太阳能电池

Yuwen Zhao, X. Jiang, Wenjing Wang, Zhongming Li, Yuan Yu, Xianbo Liao
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引用次数: 1

摘要

采用快速热化学气相沉积(RTCVD)技术,从SiH/sub 2/Cl/sub 2/或SiCl/sub 4/中生长出10-20 μ l/ m的多晶硅(poly-Si)薄膜,在1030/spl℃以上的衬底温度(T/sub s/)下生长速率可达100 a /s。发现薄膜的平均晶粒尺寸和载流子迁移率取决于T/sub /和衬底材料。利用多晶硅薄膜在重掺磷硅片上制备了太阳能电池,最佳电池的能量转换效率为9.88% (AM 1.5G, 100 mW/cm/sup 2/, 25/spl℃)。
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Poly-silicon thin films and solar cells prepared by rapid thermal CVD
Polycrystalline silicon (poly-Si) films (10-20 /spl mu/m) were grown from SiH/sub 2/Cl/sub 2/ or SiCl/sub 4/ by a rapid thermal chemical vapor deposition (RTCVD) technique, with a growth rate up to 100 A/s at the substrate temperature (T/sub s/) of above 1030/spl deg/C. The average grain size and carrier mobility of the films were found to be dependent on T/sub s/ and the substrate materials. By using the poly-Si film, the solar cells have been prepared on the heavily phosphorus-doped Si wafer, and the energy conversion efficiency of the best cell is 9.88% (AM 1.5G, 100 mW/cm/sup 2/, 25/spl deg/C).
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