对高精度带隙基准电压的非理想影响进行了详细分析

Jun He, R. Geiger, Degang Chen
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引用次数: 3

摘要

直到最近,大多数基本带隙参考的输出电压的封闭形式表达式还不可用,这使得分析和系统地确定非理想元件的温度依赖性对输出电压的大小、拐点位置和这些带隙电路的曲率的影响变得困难。本文确定了几种会对带隙参考器件性能产生不利影响的非理想元件。提出了一种系统的方法来分析确定非理想组分的温度依赖性的影响。给出了两种最常见的非理想元件——温度相关的增益决定电阻和放大器偏置电压对基本带隙电路温度特性影响的解析表达式。通过将解析结果与Spectre仿真结果进行比较,验证了解析表达式的有效性。
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A detailed analysis of nonideal effects on high precision bandgap voltage references
Until recently a closed-form expression for the output voltage of the most basic bandgap references was not available making it difficult to analytically and systematically determine the effects of the temperature dependence of non-ideal components on the magnitude of the output voltage, on the inflection point location, and on the curvature of these bandgap circuits. In this paper several non-ideal components that can adversely affect the performance of bandgap references are identified. A systematic approach is proposed to analytically determine the effects of the temperature dependence of non-ideal components. Analytical expressions for the effects of two of the most common non-ideal components, the temperature-dependent gain-determining resistors and the amplifier offset voltage, on the temperature characteristics of basic band-gap circuits are developed. The effectiveness of the analytical expression is validated by comparing analytical results with simulation results obtained from Spectre.
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