K. Yamauchi, H. Noto, Hiroyuki Nonomura, Satoshi Kunugi, M. Nakayama, Y. Hirano
{"title":"功率增加效率45%,ku波段60W GaN功率放大器","authors":"K. Yamauchi, H. Noto, Hiroyuki Nonomura, Satoshi Kunugi, M. Nakayama, Y. Hirano","doi":"10.1109/MWSYM.2011.5972762","DOIUrl":null,"url":null,"abstract":"A Ku-band 60W GaN power amplifier is presented. To obtain the high efficiency, new matching circuit topology to control the reflection phase at the 2nd harmonic frequency (2fo) is applied to the power amplifier. The measured power added efficiency (PAE) of 44.9% with the output power of 47.9dBm (62.2W) is obtained in the 15GHz-band. To the best of our knowledge, the PAE is the highest of the Ku-band GaN power amplifiers reported to date.","PeriodicalId":294862,"journal":{"name":"2011 IEEE MTT-S International Microwave Symposium","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"19","resultStr":"{\"title\":\"A 45% power added efficiency, Ku-band 60W GaN power amplifier\",\"authors\":\"K. Yamauchi, H. Noto, Hiroyuki Nonomura, Satoshi Kunugi, M. Nakayama, Y. Hirano\",\"doi\":\"10.1109/MWSYM.2011.5972762\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Ku-band 60W GaN power amplifier is presented. To obtain the high efficiency, new matching circuit topology to control the reflection phase at the 2nd harmonic frequency (2fo) is applied to the power amplifier. The measured power added efficiency (PAE) of 44.9% with the output power of 47.9dBm (62.2W) is obtained in the 15GHz-band. To the best of our knowledge, the PAE is the highest of the Ku-band GaN power amplifiers reported to date.\",\"PeriodicalId\":294862,\"journal\":{\"name\":\"2011 IEEE MTT-S International Microwave Symposium\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-06-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"19\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE MTT-S International Microwave Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2011.5972762\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2011.5972762","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 45% power added efficiency, Ku-band 60W GaN power amplifier
A Ku-band 60W GaN power amplifier is presented. To obtain the high efficiency, new matching circuit topology to control the reflection phase at the 2nd harmonic frequency (2fo) is applied to the power amplifier. The measured power added efficiency (PAE) of 44.9% with the output power of 47.9dBm (62.2W) is obtained in the 15GHz-band. To the best of our knowledge, the PAE is the highest of the Ku-band GaN power amplifiers reported to date.